Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree

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Bibliographic Details
Main Author: Journal of Chemistry
Format: Article
Language:English
Published: Wiley 2023-01-01
Series:Journal of Chemistry
Online Access:http://dx.doi.org/10.1155/2023/9812714
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_version_ 1849408891858714624
author Journal of Chemistry
author_facet Journal of Chemistry
author_sort Journal of Chemistry
collection DOAJ
format Article
id doaj-art-7ed4d97dd14442f1851eee2786ebcb99
institution Kabale University
issn 2090-9071
language English
publishDate 2023-01-01
publisher Wiley
record_format Article
series Journal of Chemistry
spelling doaj-art-7ed4d97dd14442f1851eee2786ebcb992025-08-20T03:35:40ZengWileyJournal of Chemistry2090-90712023-01-01202310.1155/2023/9812714Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-DegreeJournal of Chemistryhttp://dx.doi.org/10.1155/2023/9812714
spellingShingle Journal of Chemistry
Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree
Journal of Chemistry
title Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree
title_full Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree
title_fullStr Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree
title_full_unstemmed Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree
title_short Retracted: Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree
title_sort retracted topological attributes of silicon carbide sic4 ii i j based on ve degree and ev degree
url http://dx.doi.org/10.1155/2023/9812714
work_keys_str_mv AT journalofchemistry retractedtopologicalattributesofsiliconcarbidesic4iiijbasedonvedegreeandevdegree