Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs). Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10−4 mA at...
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Wiley
2012-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2012/654762 |
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| author | Shih-Wei Tan Shih-Wen Lai |
| author_facet | Shih-Wei Tan Shih-Wen Lai |
| author_sort | Shih-Wei Tan |
| collection | DOAJ |
| description | A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs). Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10−4 mA at of 4.5 V. The HBTs are examined by thermal treatment with rapid thermal process (RTP) annealing at various times and various temperatures. Experimental results reveal that the HBTs with the thermal treatment exhibit a lowest turn-on voltage of 3.90 V, a highest current gain of 9.55, and highest collector current of 112.2 mA at of 4.5 V. The thermal treatment brings forth the most remarkable improvements for the HBTs when the base parasitical Schottky diodes are modified. |
| format | Article |
| id | doaj-art-7ea97ffda5734f4ead2a7a04e3cb1d94 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-7ea97ffda5734f4ead2a7a04e3cb1d942025-08-20T03:35:48ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422012-01-01201210.1155/2012/654762654762Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal TreatmentShih-Wei Tan0Shih-Wen Lai1Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road Keelung 202, TaiwanDepartment of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road Keelung 202, TaiwanA thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs). Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10−4 mA at of 4.5 V. The HBTs are examined by thermal treatment with rapid thermal process (RTP) annealing at various times and various temperatures. Experimental results reveal that the HBTs with the thermal treatment exhibit a lowest turn-on voltage of 3.90 V, a highest current gain of 9.55, and highest collector current of 112.2 mA at of 4.5 V. The thermal treatment brings forth the most remarkable improvements for the HBTs when the base parasitical Schottky diodes are modified.http://dx.doi.org/10.1155/2012/654762 |
| spellingShingle | Shih-Wei Tan Shih-Wen Lai Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment Advances in Materials Science and Engineering |
| title | Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment |
| title_full | Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment |
| title_fullStr | Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment |
| title_full_unstemmed | Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment |
| title_short | Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment |
| title_sort | reduced turn on voltage for npn graded base algan gan heterojunction bipolar transistors by thermal treatment |
| url | http://dx.doi.org/10.1155/2012/654762 |
| work_keys_str_mv | AT shihweitan reducedturnonvoltagefornpngradedbasealganganheterojunctionbipolartransistorsbythermaltreatment AT shihwenlai reducedturnonvoltagefornpngradedbasealganganheterojunctionbipolartransistorsbythermaltreatment |