Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of Al compos...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0249739 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|