Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of Al compos...
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AIP Publishing LLC
2025-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0249739 |
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| author | Kohei Ueno Ryota Maeda Takao Kozaka Hiroshi Fujioka |
| author_facet | Kohei Ueno Ryota Maeda Takao Kozaka Hiroshi Fujioka |
| author_sort | Kohei Ueno |
| collection | DOAJ |
| description | This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of Al compositions (0.3 ≤ x ≤ 0.7). Partially relaxed AlN/Al0.3Ga0.7N/AlN HEMTs exhibited a high drain current (ID = 580 mA/mm) and low contact resistance (RC = 0.30 Ω mm). Fully strained AlN/Al0.5Ga0.5N/AlN HEMTs achieved a balance between low on-resistance and high breakdown voltage, resulting in the highest lateral figure of merit of 319 MW/cm2 in this study. For x = 0.6, a peak breakdown electric field of 6.0 MV/cm was observed in a device with a short gate–drain distance. These results show the great potential of the low-temperature sputtering epitaxial growth process of AlN/AlxGa1−xN/AlN double heterostructure HEMTs with the degenerate regrowth GaN source–drain for the next-generation ultrahigh BV power electronics. |
| format | Article |
| id | doaj-art-7dc899d6f86442b7a182d6c19d610ede |
| institution | OA Journals |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-04-01 |
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| spelling | doaj-art-7dc899d6f86442b7a182d6c19d610ede2025-08-20T02:11:08ZengAIP Publishing LLCAPL Materials2166-532X2025-04-01134041129041129-710.1063/5.0249739Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cmKohei Ueno0Ryota Maeda1Takao Kozaka2Hiroshi Fujioka3Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanThis study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of Al compositions (0.3 ≤ x ≤ 0.7). Partially relaxed AlN/Al0.3Ga0.7N/AlN HEMTs exhibited a high drain current (ID = 580 mA/mm) and low contact resistance (RC = 0.30 Ω mm). Fully strained AlN/Al0.5Ga0.5N/AlN HEMTs achieved a balance between low on-resistance and high breakdown voltage, resulting in the highest lateral figure of merit of 319 MW/cm2 in this study. For x = 0.6, a peak breakdown electric field of 6.0 MV/cm was observed in a device with a short gate–drain distance. These results show the great potential of the low-temperature sputtering epitaxial growth process of AlN/AlxGa1−xN/AlN double heterostructure HEMTs with the degenerate regrowth GaN source–drain for the next-generation ultrahigh BV power electronics.http://dx.doi.org/10.1063/5.0249739 |
| spellingShingle | Kohei Ueno Ryota Maeda Takao Kozaka Hiroshi Fujioka Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm APL Materials |
| title | Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm |
| title_full | Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm |
| title_fullStr | Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm |
| title_full_unstemmed | Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm |
| title_short | Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm |
| title_sort | degenerate gan source drain aln alxga1 xn aln high electron mobility transistors with a high breakdown electric field reaching 6 0 mv cm |
| url | http://dx.doi.org/10.1063/5.0249739 |
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