Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging
New applications like depth measurements or multispectral imaging require to develop image sensors able to sense efficiently in the Near Infrared and Short-Wave Infrared where silicon is weakly sensitive. Colloidal Quantum Dots (CQD) technology is an interesting candidate to address these new applic...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10742005/ |
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| author | Loic Baudoin Arthur Arnaud Sebastien Massenot Pierre Magnan |
| author_facet | Loic Baudoin Arthur Arnaud Sebastien Massenot Pierre Magnan |
| author_sort | Loic Baudoin |
| collection | DOAJ |
| description | New applications like depth measurements or multispectral imaging require to develop image sensors able to sense efficiently in the Near Infrared and Short-Wave Infrared where silicon is weakly sensitive. Colloidal Quantum Dots (CQD) technology is an interesting candidate to address these new applications as it allows to develop image sensors with high quantum efficiency at excitonic peak and high-resolution images. In this paper, we present an electrical model describing the electrical behavior of a designed and manufactured CQD photodiode. We use this model to explore a different architecture collecting holes instead of electrons. This architecture allows to control the charge collection inside the CQD thin film through the electric field. This property enables to implement global shutter functionality, to bin charges from several photodiodes, or to operate two physically interleaved photodiodes arrays alternatively with different types of pixel circuitries. These operating modes extend the capabilities of CQD image sensors in terms of applications. |
| format | Article |
| id | doaj-art-7d8197e1eff04bdb95ad376f97711555 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-7d8197e1eff04bdb95ad376f977115552025-01-29T00:00:38ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-01121011102010.1109/JEDS.2024.348967210742005Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR ImagingLoic Baudoin0https://orcid.org/0000-0001-5000-6118Arthur Arnaud1Sebastien Massenot2https://orcid.org/0000-0003-2127-0280Pierre Magnan3Technology for Optical Sensors, STMicroelectronics, Crolles, FranceTechnology for Optical Sensors, STMicroelectronics, Crolles, FranceISAE SUPAERO, University of Toulouse, Toulouse, FranceISAE SUPAERO, University of Toulouse, Toulouse, FranceNew applications like depth measurements or multispectral imaging require to develop image sensors able to sense efficiently in the Near Infrared and Short-Wave Infrared where silicon is weakly sensitive. Colloidal Quantum Dots (CQD) technology is an interesting candidate to address these new applications as it allows to develop image sensors with high quantum efficiency at excitonic peak and high-resolution images. In this paper, we present an electrical model describing the electrical behavior of a designed and manufactured CQD photodiode. We use this model to explore a different architecture collecting holes instead of electrons. This architecture allows to control the charge collection inside the CQD thin film through the electric field. This property enables to implement global shutter functionality, to bin charges from several photodiodes, or to operate two physically interleaved photodiodes arrays alternatively with different types of pixel circuitries. These operating modes extend the capabilities of CQD image sensors in terms of applications.https://ieeexplore.ieee.org/document/10742005/Image sensorscolloidal quantum dots (CQD)near-infrared (NIR)short-wave infrared (SWIR)binning |
| spellingShingle | Loic Baudoin Arthur Arnaud Sebastien Massenot Pierre Magnan Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging IEEE Journal of the Electron Devices Society Image sensors colloidal quantum dots (CQD) near-infrared (NIR) short-wave infrared (SWIR) binning |
| title | Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging |
| title_full | Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging |
| title_fullStr | Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging |
| title_full_unstemmed | Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging |
| title_short | Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging |
| title_sort | global shutter and charge binning with quantum dots photodiode arrays for nir imaging |
| topic | Image sensors colloidal quantum dots (CQD) near-infrared (NIR) short-wave infrared (SWIR) binning |
| url | https://ieeexplore.ieee.org/document/10742005/ |
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