Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure
Abstract Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibl...
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Nature Portfolio
2025-02-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-025-56157-6 |
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author | Ju-Young Yoon Yutaro Takeuchi Ryota Takechi Jiahao Han Tomohiro Uchimura Yuta Yamane Shun Kanai Jun’ichi Ieda Hideo Ohno Shunsuke Fukami |
author_facet | Ju-Young Yoon Yutaro Takeuchi Ryota Takechi Jiahao Han Tomohiro Uchimura Yuta Yamane Shun Kanai Jun’ichi Ieda Hideo Ohno Shunsuke Fukami |
author_sort | Ju-Young Yoon |
collection | DOAJ |
description | Abstract Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibly programmable SOT devices. Achieving this requires electrical control of the current-induced spin polarization of the spin source. Here we demonstrate a proof-of-concept current-programmed SOT device. Using a noncollinear-antiferromagnetic/nonmagnetic/ferromagnetic Mn3Sn/Mo/CoFeB heterostructure at zero magnetic field, we show current-induced switching in the CoFeB layer due to the spin current polarized by the magnetic structure of the Mn3Sn; by properly tuning the driving current, the spin current from the CoFeB further reverses the magnetic orientation of the Mn3Sn, which determines the polarity of the subsequent switching of the CoFeB. This scheme of mutual switching can be achieved in a spin-valve-like simple protocol because each magnetic layer serves as a reversible spin source and target magnetic electrode. It yields intriguing proof-of-concept functionalities for unconventional logic and neuromorphic computing. |
format | Article |
id | doaj-art-7d24aa282b144ba2bc10a6425adcaefb |
institution | Kabale University |
issn | 2041-1723 |
language | English |
publishDate | 2025-02-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Nature Communications |
spelling | doaj-art-7d24aa282b144ba2bc10a6425adcaefb2025-02-09T12:44:13ZengNature PortfolioNature Communications2041-17232025-02-011611810.1038/s41467-025-56157-6Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructureJu-Young Yoon0Yutaro Takeuchi1Ryota Takechi2Jiahao Han3Tomohiro Uchimura4Yuta Yamane5Shun Kanai6Jun’ichi Ieda7Hideo Ohno8Shunsuke Fukami9Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityAdvanced Science Research Center, Japan Atomic Energy AgencyLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityLaboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku UniversityAbstract Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibly programmable SOT devices. Achieving this requires electrical control of the current-induced spin polarization of the spin source. Here we demonstrate a proof-of-concept current-programmed SOT device. Using a noncollinear-antiferromagnetic/nonmagnetic/ferromagnetic Mn3Sn/Mo/CoFeB heterostructure at zero magnetic field, we show current-induced switching in the CoFeB layer due to the spin current polarized by the magnetic structure of the Mn3Sn; by properly tuning the driving current, the spin current from the CoFeB further reverses the magnetic orientation of the Mn3Sn, which determines the polarity of the subsequent switching of the CoFeB. This scheme of mutual switching can be achieved in a spin-valve-like simple protocol because each magnetic layer serves as a reversible spin source and target magnetic electrode. It yields intriguing proof-of-concept functionalities for unconventional logic and neuromorphic computing.https://doi.org/10.1038/s41467-025-56157-6 |
spellingShingle | Ju-Young Yoon Yutaro Takeuchi Ryota Takechi Jiahao Han Tomohiro Uchimura Yuta Yamane Shun Kanai Jun’ichi Ieda Hideo Ohno Shunsuke Fukami Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure Nature Communications |
title | Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure |
title_full | Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure |
title_fullStr | Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure |
title_full_unstemmed | Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure |
title_short | Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure |
title_sort | electrical mutual switching in a noncollinear antiferromagnetic ferromagnetic heterostructure |
url | https://doi.org/10.1038/s41467-025-56157-6 |
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