High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy
Infrared (IR) spectroscopy is a powerful, nondestructive analytical technique that requires cost‐effective and highly sensitive IR photodetectors (PDs). Herein, complementary metal‐oxide‐semiconductor (CMOS)‐compatible GeSn p–i–n PDs with record‐high detectivity (D*) are presented, offering a broad...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Photonics Research |
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| Online Access: | https://doi.org/10.1002/adpr.202400155 |
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| author | Meng‐Hsien Chou Radhika Bansal Yue‐Tong Jheng Greg Sun Wei Du Shui‐Qing Yu Guo‐En Chang |
| author_facet | Meng‐Hsien Chou Radhika Bansal Yue‐Tong Jheng Greg Sun Wei Du Shui‐Qing Yu Guo‐En Chang |
| author_sort | Meng‐Hsien Chou |
| collection | DOAJ |
| description | Infrared (IR) spectroscopy is a powerful, nondestructive analytical technique that requires cost‐effective and highly sensitive IR photodetectors (PDs). Herein, complementary metal‐oxide‐semiconductor (CMOS)‐compatible GeSn p–i–n PDs with record‐high detectivity (D*) are presented, offering a broad photodetection range that spans the mid‐IR region. With 10% Sn incorporation, the photodetection range extends to 2680 nm. By introducing a composition‐graded GeSn buffer to enhance the material quality and increasing the thickness of the GeSn active layer to 1490 nm, optical responsivity and dark current are significantly improved, thereby achieving record‐high D* values of 3.15×109 cm·Hz1/2 W−1 and 1.19×1010 cm·Hz1/2 W−1 at T = 300 K and T = 77 K, respectively. Leveraging these record‐high D* levels, the capability of GeSn PDs in IR spectroscopy is demonstrated, which can resolve weak photoluminescence from Ge, confirming their effectiveness for sensitive IR detection. |
| format | Article |
| id | doaj-art-7ceee5954ea340289402cd6f1f865d9d |
| institution | OA Journals |
| issn | 2699-9293 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj-art-7ceee5954ea340289402cd6f1f865d9d2025-08-20T02:33:15ZengWiley-VCHAdvanced Photonics Research2699-92932025-06-0166n/an/a10.1002/adpr.202400155High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared SpectroscopyMeng‐Hsien Chou0Radhika Bansal1Yue‐Tong Jheng2Greg Sun3Wei Du4Shui‐Qing Yu5Guo‐En Chang6Department of Mechanical Engineering and Advanced Institute of Manufacturing with High‐Tech Innovations (AIM‐HI) National Chung Cheng University Chiayi County 62102 TaiwanDepartment of Mechanical Engineering and Advanced Institute of Manufacturing with High‐Tech Innovations (AIM‐HI) National Chung Cheng University Chiayi County 62102 TaiwanDepartment of Mechanical Engineering and Advanced Institute of Manufacturing with High‐Tech Innovations (AIM‐HI) National Chung Cheng University Chiayi County 62102 TaiwanDepartment of Engineering University of Massachusetts—Boston Boston MA 02125 USADepartment of Electrical Engineering and Computer Science University of Arkansas Fayetteville AR 72701 USADepartment of Electrical Engineering and Computer Science University of Arkansas Fayetteville AR 72701 USADepartment of Mechanical Engineering and Advanced Institute of Manufacturing with High‐Tech Innovations (AIM‐HI) National Chung Cheng University Chiayi County 62102 TaiwanInfrared (IR) spectroscopy is a powerful, nondestructive analytical technique that requires cost‐effective and highly sensitive IR photodetectors (PDs). Herein, complementary metal‐oxide‐semiconductor (CMOS)‐compatible GeSn p–i–n PDs with record‐high detectivity (D*) are presented, offering a broad photodetection range that spans the mid‐IR region. With 10% Sn incorporation, the photodetection range extends to 2680 nm. By introducing a composition‐graded GeSn buffer to enhance the material quality and increasing the thickness of the GeSn active layer to 1490 nm, optical responsivity and dark current are significantly improved, thereby achieving record‐high D* values of 3.15×109 cm·Hz1/2 W−1 and 1.19×1010 cm·Hz1/2 W−1 at T = 300 K and T = 77 K, respectively. Leveraging these record‐high D* levels, the capability of GeSn PDs in IR spectroscopy is demonstrated, which can resolve weak photoluminescence from Ge, confirming their effectiveness for sensitive IR detection.https://doi.org/10.1002/adpr.202400155detectivityGeSn alloysinfrared spectroscopymid‐infraredphotodetectors |
| spellingShingle | Meng‐Hsien Chou Radhika Bansal Yue‐Tong Jheng Greg Sun Wei Du Shui‐Qing Yu Guo‐En Chang High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy Advanced Photonics Research detectivity GeSn alloys infrared spectroscopy mid‐infrared photodetectors |
| title | High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy |
| title_full | High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy |
| title_fullStr | High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy |
| title_full_unstemmed | High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy |
| title_short | High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy |
| title_sort | high detectivity gesn mid infrared photodetectors for sensitive infrared spectroscopy |
| topic | detectivity GeSn alloys infrared spectroscopy mid‐infrared photodetectors |
| url | https://doi.org/10.1002/adpr.202400155 |
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