CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS
Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2017-12-01
|
| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/344 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849241576342028288 |
|---|---|
| author | V. А. Pilipenko V. A. Saladukha V. A. Filipenya R. I. Vorobey O. K. Gusev A. L. Zharin K. V. Pantsialeyeu A. I. Svistun A. K. Tyavlovsky K. L. Tyavlovsky |
| author_facet | V. А. Pilipenko V. A. Saladukha V. A. Filipenya R. I. Vorobey O. K. Gusev A. L. Zharin K. V. Pantsialeyeu A. I. Svistun A. K. Tyavlovsky K. L. Tyavlovsky |
| author_sort | V. А. Pilipenko |
| collection | DOAJ |
| description | Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm).Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects. |
| format | Article |
| id | doaj-art-7ce66eec3f1e4c2aaa1698b4a81a3d81 |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2017-12-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-7ce66eec3f1e4c2aaa1698b4a81a3d812025-08-20T04:00:07ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732017-12-018434435610.21122/2220-9506-2017-8-4-24-31295CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODSV. А. Pilipenko0V. A. Saladukha1V. A. Filipenya2R. I. Vorobey3O. K. Gusev4A. L. Zharin5K. V. Pantsialeyeu6A. I. Svistun7A. K. Tyavlovsky8K. L. Tyavlovsky9Integral JSCIntegral JSCIntegral JSCBelarusian National Technical UniversityBelarusian National Technical UniversityIntegral JSCBelarusian National Technical UniversityBelarusian National Technical UniversityBelarusian National Technical UniversityBelarusian National Technical UniversityIntroduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm).Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.https://pimi.bntu.by/jour/article/view/344silicon-silicon dioxide structurethermal treatmentkelvin probec-v curveinterface charge |
| spellingShingle | V. А. Pilipenko V. A. Saladukha V. A. Filipenya R. I. Vorobey O. K. Gusev A. L. Zharin K. V. Pantsialeyeu A. I. Svistun A. K. Tyavlovsky K. L. Tyavlovsky CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS Приборы и методы измерений silicon-silicon dioxide structure thermal treatment kelvin probe c-v curve interface charge |
| title | CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS |
| title_full | CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS |
| title_fullStr | CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS |
| title_full_unstemmed | CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS |
| title_short | CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS |
| title_sort | characterization of the electrophysical properties of silicon silicon dioxide interface using probe electrometry methods |
| topic | silicon-silicon dioxide structure thermal treatment kelvin probe c-v curve interface charge |
| url | https://pimi.bntu.by/jour/article/view/344 |
| work_keys_str_mv | AT vapilipenko characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT vasaladukha characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT vafilipenya characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT rivorobey characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT okgusev characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT alzharin characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT kvpantsialeyeu characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT aisvistun characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT aktyavlovsky characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods AT kltyavlovsky characterizationoftheelectrophysicalpropertiesofsiliconsilicondioxideinterfaceusingprobeelectrometrymethods |