Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored. We report the development of an E-mode AlGaN/GaN HEMT through the strategic design of the AlxGa1−xN...
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AIP Publishing LLC
2025-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0250125 |
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| author | Bang-zhi Xiao Yin-shui He Wen-bo Xiao |
| author_facet | Bang-zhi Xiao Yin-shui He Wen-bo Xiao |
| author_sort | Bang-zhi Xiao |
| collection | DOAJ |
| description | In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored. We report the development of an E-mode AlGaN/GaN HEMT through the strategic design of the AlxGa1−xN barrier layer and p-type GaN gate. The modulation of Vth is demonstrated to be highly responsive to variations in the thickness and aluminum mole fraction of the AlxGa1−xN barrier layer, with a decrease in these parameters correlating with an increase in Vth. Moreover, we have established that augmenting the thickness and doping concentration of the p-GaN layer can lead to a further enhancement of Vth. However, this improvement is counterbalanced by a reduction in transconductance. Consequently, we propose an optimized p-GaN/AlGaN/GaN HEMT design, which exhibits a Vth of up to +1.96 V and a peak transconductance of 282 mS/mm. Our findings elucidate the intricate relationship between the barrier and gate layers and their influence on HEMT device performance, providing a foundation for the design of high-performance E-mode AlGaN/GaN HEMTs. |
| format | Article |
| id | doaj-art-7cdfc083d7384bd795afe1d602ac13a6 |
| institution | OA Journals |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-7cdfc083d7384bd795afe1d602ac13a62025-08-20T01:48:13ZengAIP Publishing LLCAIP Advances2158-32262025-04-01154045235045235-810.1063/5.0250125Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistorsBang-zhi Xiao0Yin-shui He1Wen-bo Xiao2School of Advanced Manufacturing, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, People’s Republic of ChinaSchool of Resources Environmental and Chemical Engineering, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, People’s Republic of ChinaNanchang Hangkong University, Nanchang 330063, People’s Republic of ChinaIn this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored. We report the development of an E-mode AlGaN/GaN HEMT through the strategic design of the AlxGa1−xN barrier layer and p-type GaN gate. The modulation of Vth is demonstrated to be highly responsive to variations in the thickness and aluminum mole fraction of the AlxGa1−xN barrier layer, with a decrease in these parameters correlating with an increase in Vth. Moreover, we have established that augmenting the thickness and doping concentration of the p-GaN layer can lead to a further enhancement of Vth. However, this improvement is counterbalanced by a reduction in transconductance. Consequently, we propose an optimized p-GaN/AlGaN/GaN HEMT design, which exhibits a Vth of up to +1.96 V and a peak transconductance of 282 mS/mm. Our findings elucidate the intricate relationship between the barrier and gate layers and their influence on HEMT device performance, providing a foundation for the design of high-performance E-mode AlGaN/GaN HEMTs.http://dx.doi.org/10.1063/5.0250125 |
| spellingShingle | Bang-zhi Xiao Yin-shui He Wen-bo Xiao Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors AIP Advances |
| title | Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors |
| title_full | Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors |
| title_fullStr | Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors |
| title_full_unstemmed | Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors |
| title_short | Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors |
| title_sort | influence of alxga1 xn barrier layer thickness and p gan gate characteristics on the threshold voltage of p gan algan gan high electron mobility transistors |
| url | http://dx.doi.org/10.1063/5.0250125 |
| work_keys_str_mv | AT bangzhixiao influenceofalxga1xnbarrierlayerthicknessandpgangatecharacteristicsonthethresholdvoltageofpganalganganhighelectronmobilitytransistors AT yinshuihe influenceofalxga1xnbarrierlayerthicknessandpgangatecharacteristicsonthethresholdvoltageofpganalganganhighelectronmobilitytransistors AT wenboxiao influenceofalxga1xnbarrierlayerthicknessandpgangatecharacteristicsonthethresholdvoltageofpganalganganhighelectronmobilitytransistors |