APA (7th ed.) Citation

Xiao, B., He, Y., & Xiao, W. Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors. AIP Publishing LLC.

Chicago Style (17th ed.) Citation

Xiao, Bang-zhi, Yin-shui He, and Wen-bo Xiao. Influence of AlxGa1−xN Barrier Layer Thickness and P-GaN Gate Characteristics on the Threshold Voltage of P-GaN/AlGaN/GaN High Electron Mobility Transistors. AIP Publishing LLC.

MLA (9th ed.) Citation

Xiao, Bang-zhi, et al. Influence of AlxGa1−xN Barrier Layer Thickness and P-GaN Gate Characteristics on the Threshold Voltage of P-GaN/AlGaN/GaN High Electron Mobility Transistors. AIP Publishing LLC.