Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices
Abstract Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications. However, the devices are typically grown on expensive and small-size III-V substrates. Si substrates can offer much improved scalability, lower cost and higher the...
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SpringerOpen
2025-07-01
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| Series: | PhotoniX |
| Online Access: | https://doi.org/10.1186/s43074-025-00180-9 |
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| author | Tsimafei Laryn Rafael Jumar Chu Yeonhwa Kim Eunkyo Ju Chunghyun Ahn Hyun-Yong Yu May Madarang Hojoong Jung Won Jun Choi Daehwan Jung |
| author_facet | Tsimafei Laryn Rafael Jumar Chu Yeonhwa Kim Eunkyo Ju Chunghyun Ahn Hyun-Yong Yu May Madarang Hojoong Jung Won Jun Choi Daehwan Jung |
| author_sort | Tsimafei Laryn |
| collection | DOAJ |
| description | Abstract Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications. However, the devices are typically grown on expensive and small-size III-V substrates. Si substrates can offer much improved scalability, lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si. Here, we propose multifunctional metamorphic In0.1Ga0.9As/AlAs distributed Bragg reflectors (DBRs) on Si which serve as a bottom mirror with a high reflectivity of 99.8% while simultaneously reducing the crystalline defect density by a factor of three, compared to GaAs/AlAs DBR on Si. The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with root-mean-square roughness of 1.2 nm, which is five times smoother than the conventional GaAs/AlAs structure on Si. Furthermore, as proof of concept, InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers. A narrow electroluminescence linewidth of 11.5 meV is observed, confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates. |
| format | Article |
| id | doaj-art-7c4e3f52c1234ed895019290285fbf7e |
| institution | Kabale University |
| issn | 2662-1991 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | SpringerOpen |
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| series | PhotoniX |
| spelling | doaj-art-7c4e3f52c1234ed895019290285fbf7e2025-08-20T04:02:55ZengSpringerOpenPhotoniX2662-19912025-07-016111310.1186/s43074-025-00180-9Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devicesTsimafei Laryn0Rafael Jumar Chu1Yeonhwa Kim2Eunkyo Ju3Chunghyun Ahn4Hyun-Yong Yu5May Madarang6Hojoong Jung7Won Jun Choi8Daehwan Jung9Center for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologySchool of Electrical Engineering, Korea UniversityCenter for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologyCenter for Quantum Technology, Korea Institute of Science and TechnologyAbstract Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications. However, the devices are typically grown on expensive and small-size III-V substrates. Si substrates can offer much improved scalability, lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si. Here, we propose multifunctional metamorphic In0.1Ga0.9As/AlAs distributed Bragg reflectors (DBRs) on Si which serve as a bottom mirror with a high reflectivity of 99.8% while simultaneously reducing the crystalline defect density by a factor of three, compared to GaAs/AlAs DBR on Si. The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with root-mean-square roughness of 1.2 nm, which is five times smoother than the conventional GaAs/AlAs structure on Si. Furthermore, as proof of concept, InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers. A narrow electroluminescence linewidth of 11.5 meV is observed, confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates.https://doi.org/10.1186/s43074-025-00180-9 |
| spellingShingle | Tsimafei Laryn Rafael Jumar Chu Yeonhwa Kim Eunkyo Ju Chunghyun Ahn Hyun-Yong Yu May Madarang Hojoong Jung Won Jun Choi Daehwan Jung Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices PhotoniX |
| title | Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices |
| title_full | Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices |
| title_fullStr | Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices |
| title_full_unstemmed | Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices |
| title_short | Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices |
| title_sort | multifunctional metamorphic iii v distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices |
| url | https://doi.org/10.1186/s43074-025-00180-9 |
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