Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics

Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics

This work systematically investigates the programming and erasing dynamics of IGZO-channel back-gated FeFETs, uncovering that erase operation is significantly slower than programming. PUND measurements in ferroelectric capacitors with IGZO top electrodes reveal that the ferroelectric switching kinet...

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Bibliographic Details
Main Authors: Zhuo Chen, Nicolo Ronchi, Roman Izmailov, Hongwei Tang, Mihaela Ioana Popovici, Harold Dekkers, Alexandru Pavel, Geert Van den Bosch, Maarten Rosmeulen, Valeri V. Afanas'Ev, Jan Van Houdt
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
IGZO
oxide semiconductor
ferroelectric
HZO
switching kinetics
Online Access:https://ieeexplore.ieee.org/document/10883345/
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