MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments
This study introduces a manufacturing process based on industrial MEMS technology, enabling the production of diverse sensor designs customized for a wide range of absolute pressure measurements. Using monocrystalline silicon as the structural material minimizes thermal stresses and eliminates tempe...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-01-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/25/3/636 |
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| author | Muhannad Ghanam Peter Woias Frank Goldschmidtböing |
| author_facet | Muhannad Ghanam Peter Woias Frank Goldschmidtböing |
| author_sort | Muhannad Ghanam |
| collection | DOAJ |
| description | This study introduces a manufacturing process based on industrial MEMS technology, enabling the production of diverse sensor designs customized for a wide range of absolute pressure measurements. Using monocrystalline silicon as the structural material minimizes thermal stresses and eliminates temperature-dependent semiconductor effects, as silicon functions solely as a mechanical material. Integrating a eutectic bonding process in the sensor fabrication allows for a reliable operation at temperatures up to 350 °C. The capacitive sensor electrodes are enclosed within a silicon-based Faraday cage, ensuring effective shielding against external electrostatic interference. An innovative Through-Silicon Via (TSV) design, sealed using gold–gold (Au-Au) diffusion and gold–silicon (Au-Si) eutectic bonding, further enhances the mechanical and thermal stability of the sensors, even under high-temperature conditions. The unfilled TSV structure mitigates mechanical stress from thermal expansion. The sensors exhibited excellent performance, achieving a linearity of 99.994%, a thermal drift of −0.0164% FS (full scale)/K at full load and 350 °C, and a high sensitivity of 34 fF/kPa. These results highlight the potential of these sensors for high-performance applications across various demanding environments. |
| format | Article |
| id | doaj-art-7bf3a7f42e844d51ba4ca8782a484d03 |
| institution | OA Journals |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj-art-7bf3a7f42e844d51ba4ca8782a484d032025-08-20T02:12:29ZengMDPI AGSensors1424-82202025-01-0125363610.3390/s25030636MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature EnvironmentsMuhannad Ghanam0Peter Woias1Frank Goldschmidtböing2Laboratory for Design of Microsystems, IMTEK—University of Freiburg, 79110 Freiburg im Breisgau, GermanyLaboratory for Design of Microsystems, IMTEK—University of Freiburg, 79110 Freiburg im Breisgau, GermanyLaboratory for Design of Microsystems, IMTEK—University of Freiburg, 79110 Freiburg im Breisgau, GermanyThis study introduces a manufacturing process based on industrial MEMS technology, enabling the production of diverse sensor designs customized for a wide range of absolute pressure measurements. Using monocrystalline silicon as the structural material minimizes thermal stresses and eliminates temperature-dependent semiconductor effects, as silicon functions solely as a mechanical material. Integrating a eutectic bonding process in the sensor fabrication allows for a reliable operation at temperatures up to 350 °C. The capacitive sensor electrodes are enclosed within a silicon-based Faraday cage, ensuring effective shielding against external electrostatic interference. An innovative Through-Silicon Via (TSV) design, sealed using gold–gold (Au-Au) diffusion and gold–silicon (Au-Si) eutectic bonding, further enhances the mechanical and thermal stability of the sensors, even under high-temperature conditions. The unfilled TSV structure mitigates mechanical stress from thermal expansion. The sensors exhibited excellent performance, achieving a linearity of 99.994%, a thermal drift of −0.0164% FS (full scale)/K at full load and 350 °C, and a high sensitivity of 34 fF/kPa. These results highlight the potential of these sensors for high-performance applications across various demanding environments.https://www.mdpi.com/1424-8220/25/3/636absolute sensordiffusion bondingeutectic bondingThrough-Silicon Viasthermal drift |
| spellingShingle | Muhannad Ghanam Peter Woias Frank Goldschmidtböing MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments Sensors absolute sensor diffusion bonding eutectic bonding Through-Silicon Vias thermal drift |
| title | MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments |
| title_full | MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments |
| title_fullStr | MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments |
| title_full_unstemmed | MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments |
| title_short | MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments |
| title_sort | mems pressure sensors with novel tsv design for extreme temperature environments |
| topic | absolute sensor diffusion bonding eutectic bonding Through-Silicon Vias thermal drift |
| url | https://www.mdpi.com/1424-8220/25/3/636 |
| work_keys_str_mv | AT muhannadghanam memspressuresensorswithnoveltsvdesignforextremetemperatureenvironments AT peterwoias memspressuresensorswithnoveltsvdesignforextremetemperatureenvironments AT frankgoldschmidtboing memspressuresensorswithnoveltsvdesignforextremetemperatureenvironments |