Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition
Abstract The selective influence of elastic strain on the formation of oxygen deficiencies in (001)‐, (110)‐, and (111)‐ epitaxial Hf0.5Zr0.5O2 films grown by using atomic layer deposition is reported. Optical spectroscopy, conducted using UV–vis spectroscopic ellipsometry on these Hf0.5Zr0.5O2 film...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400742 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850148234746396672 |
|---|---|
| author | Chihwan An Jung Woo Cho Tae Yoon Lee Myeong Seop Song Baekjune Kang Hongju Kim Jun Hee Lee Changhee Sohn Seung Chul Chae |
| author_facet | Chihwan An Jung Woo Cho Tae Yoon Lee Myeong Seop Song Baekjune Kang Hongju Kim Jun Hee Lee Changhee Sohn Seung Chul Chae |
| author_sort | Chihwan An |
| collection | DOAJ |
| description | Abstract The selective influence of elastic strain on the formation of oxygen deficiencies in (001)‐, (110)‐, and (111)‐ epitaxial Hf0.5Zr0.5O2 films grown by using atomic layer deposition is reported. Optical spectroscopy, conducted using UV–vis spectroscopic ellipsometry on these Hf0.5Zr0.5O2 films grown on yttria‐stabilized zirconia substrates, revealed a dominant shallow trap level in the (111)‐oriented Hf0.5Zr0.5O2 film. X‐ray photoemission spectroscopy demonstrated that the strong oxygen deficiency is preferred in the (111)‐oriented Hf0.5Zr0.5O2 film. Density functional theory calculations of oxygen vacancy formation energy also showed a pronounced preference for oxygen deficiencies in the (111) orientation. This selective formation of oxygen vacancies in the (111)‐oriented Hf0.5Zr0.5O2 film suggests that the latent phenomena associated with oxygen defects in functional Hf0.5Zr0.5O2 films are partly attributed to the directional strain in the (111) orientation. |
| format | Article |
| id | doaj-art-7be3d9b80d1e4416b7236d2ca461d10b |
| institution | OA Journals |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-7be3d9b80d1e4416b7236d2ca461d10b2025-08-20T02:27:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-04-01128n/an/a10.1002/admi.202400742Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer DepositionChihwan An0Jung Woo Cho1Tae Yoon Lee2Myeong Seop Song3Baekjune Kang4Hongju Kim5Jun Hee Lee6Changhee Sohn7Seung Chul Chae8Department of Physics Education Seoul National University Seoul 08826 Republic of KoreaDepartment of Physics Education Seoul National University Seoul 08826 Republic of KoreaDepartment of Physics Education Seoul National University Seoul 08826 Republic of KoreaDepartment of Physics Education Seoul National University Seoul 08826 Republic of KoreaDepartment of Physics Ulsan National Institute of Science and Technology Ulsan 44919 Republic of KoreaDepartment of Energy Engineering School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology Ulsan 44919 Republic of KoreaDepartment of Energy Engineering School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology Ulsan 44919 Republic of KoreaDepartment of Physics Ulsan National Institute of Science and Technology Ulsan 44919 Republic of KoreaDepartment of Physics Education Seoul National University Seoul 08826 Republic of KoreaAbstract The selective influence of elastic strain on the formation of oxygen deficiencies in (001)‐, (110)‐, and (111)‐ epitaxial Hf0.5Zr0.5O2 films grown by using atomic layer deposition is reported. Optical spectroscopy, conducted using UV–vis spectroscopic ellipsometry on these Hf0.5Zr0.5O2 films grown on yttria‐stabilized zirconia substrates, revealed a dominant shallow trap level in the (111)‐oriented Hf0.5Zr0.5O2 film. X‐ray photoemission spectroscopy demonstrated that the strong oxygen deficiency is preferred in the (111)‐oriented Hf0.5Zr0.5O2 film. Density functional theory calculations of oxygen vacancy formation energy also showed a pronounced preference for oxygen deficiencies in the (111) orientation. This selective formation of oxygen vacancies in the (111)‐oriented Hf0.5Zr0.5O2 film suggests that the latent phenomena associated with oxygen defects in functional Hf0.5Zr0.5O2 films are partly attributed to the directional strain in the (111) orientation.https://doi.org/10.1002/admi.202400742atomic layer depositionepitaxyhafnium oxideoxygen vacanciesstrain engineering |
| spellingShingle | Chihwan An Jung Woo Cho Tae Yoon Lee Myeong Seop Song Baekjune Kang Hongju Kim Jun Hee Lee Changhee Sohn Seung Chul Chae Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition Advanced Materials Interfaces atomic layer deposition epitaxy hafnium oxide oxygen vacancies strain engineering |
| title | Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition |
| title_full | Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition |
| title_fullStr | Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition |
| title_full_unstemmed | Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition |
| title_short | Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition |
| title_sort | geometrical anatomy for oxygen vacancies in epitaxial hf0 5zr0 5o2 films grown via atomic layer deposition |
| topic | atomic layer deposition epitaxy hafnium oxide oxygen vacancies strain engineering |
| url | https://doi.org/10.1002/admi.202400742 |
| work_keys_str_mv | AT chihwanan geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT jungwoocho geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT taeyoonlee geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT myeongseopsong geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT baekjunekang geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT hongjukim geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT junheelee geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT changheesohn geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition AT seungchulchae geometricalanatomyforoxygenvacanciesinepitaxialhf05zr05o2filmsgrownviaatomiclayerdeposition |