Mechanism of novel defect multiplication impacting high power 4H-SiC devices
Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel inte...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
|
| Series: | Materials & Design |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127524008104 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850101011181469696 |
|---|---|
| author | N.A. Mahadik M. Dudley B. Raghothamachar Z. Chen R.E. Stahlbush M. Hinojosa A. Lelis W. Sung |
| author_facet | N.A. Mahadik M. Dudley B. Raghothamachar Z. Chen R.E. Stahlbush M. Hinojosa A. Lelis W. Sung |
| author_sort | N.A. Mahadik |
| collection | DOAJ |
| description | Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel interactions between basal plane dislocations and threading mixed dislocations (TMDs) are described. This leads to multiplication of Shockley stacking faults (SSFs) in SiC epitaxial layers. First is a mechanism of double interaction of two SSFs with TMDs that causes the SSFs to glide on multiple basal planes, and creation of locked partial dislocation dipoles (PDD) due to the attractive force between the opposite sign partial dislocations. Second type of interaction occurs between SSFs and a tilted TMD, that results in formation of another SSF. The third type of interaction causes further SSF multiplication by unlocking previously created PDDs. This occurs when the newly formed SSF intersects with the previously locked PDD, and unlocks it, leaving behind a freely gliding partial dislocation and formation of another SSF. Multiplication of SSFs can severely degrade reliability and performance of high power SiC devices by increasing reverse leakage current and on-state resistance, and could eventually lead to device failure. |
| format | Article |
| id | doaj-art-7bbc2efb5eed490c85bc76f7795feef5 |
| institution | DOAJ |
| issn | 0264-1275 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj-art-7bbc2efb5eed490c85bc76f7795feef52025-08-20T02:40:10ZengElsevierMaterials & Design0264-12752024-12-0124811343510.1016/j.matdes.2024.113435Mechanism of novel defect multiplication impacting high power 4H-SiC devicesN.A. Mahadik0M. Dudley1B. Raghothamachar2Z. Chen3R.E. Stahlbush4M. Hinojosa5A. Lelis6W. Sung7US Naval Research Laboratory, Washington, DC 20375, USA; Corresponding author.Materials Sci. & Engineering, Stony Brook University, Stony Brook, NY 11794, USAMaterials Sci. & Engineering, Stony Brook University, Stony Brook, NY 11794, USAMaterials Sci. & Engineering, Stony Brook University, Stony Brook, NY 11794, USAUS Naval Research Laboratory, Washington, DC 20375, USAArmy Research Laboratory, Adelphi, MD 20783, USAArmy Research Laboratory, Adelphi, MD 20783, USASUNY Polytechnic Inst. Colleges of Nanoscale Sci. & Engr., Albany, NY, USABasal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel interactions between basal plane dislocations and threading mixed dislocations (TMDs) are described. This leads to multiplication of Shockley stacking faults (SSFs) in SiC epitaxial layers. First is a mechanism of double interaction of two SSFs with TMDs that causes the SSFs to glide on multiple basal planes, and creation of locked partial dislocation dipoles (PDD) due to the attractive force between the opposite sign partial dislocations. Second type of interaction occurs between SSFs and a tilted TMD, that results in formation of another SSF. The third type of interaction causes further SSF multiplication by unlocking previously created PDDs. This occurs when the newly formed SSF intersects with the previously locked PDD, and unlocks it, leaving behind a freely gliding partial dislocation and formation of another SSF. Multiplication of SSFs can severely degrade reliability and performance of high power SiC devices by increasing reverse leakage current and on-state resistance, and could eventually lead to device failure.http://www.sciencedirect.com/science/article/pii/S0264127524008104Properties of dislocationsStacking faultsDefect multiplicationMicrostructural evolutionPhotoluminescence imaging |
| spellingShingle | N.A. Mahadik M. Dudley B. Raghothamachar Z. Chen R.E. Stahlbush M. Hinojosa A. Lelis W. Sung Mechanism of novel defect multiplication impacting high power 4H-SiC devices Materials & Design Properties of dislocations Stacking faults Defect multiplication Microstructural evolution Photoluminescence imaging |
| title | Mechanism of novel defect multiplication impacting high power 4H-SiC devices |
| title_full | Mechanism of novel defect multiplication impacting high power 4H-SiC devices |
| title_fullStr | Mechanism of novel defect multiplication impacting high power 4H-SiC devices |
| title_full_unstemmed | Mechanism of novel defect multiplication impacting high power 4H-SiC devices |
| title_short | Mechanism of novel defect multiplication impacting high power 4H-SiC devices |
| title_sort | mechanism of novel defect multiplication impacting high power 4h sic devices |
| topic | Properties of dislocations Stacking faults Defect multiplication Microstructural evolution Photoluminescence imaging |
| url | http://www.sciencedirect.com/science/article/pii/S0264127524008104 |
| work_keys_str_mv | AT namahadik mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT mdudley mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT braghothamachar mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT zchen mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT restahlbush mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT mhinojosa mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT alelis mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices AT wsung mechanismofnoveldefectmultiplicationimpactinghighpower4hsicdevices |