APA (7th ed.) Citation

Mahadik, N., Dudley, M., Raghothamachar, B., Chen, Z., Stahlbush, R., Hinojosa, M., . . . Sung, W. Mechanism of novel defect multiplication impacting high power 4H-SiC devices. Elsevier.

Chicago Style (17th ed.) Citation

Mahadik, N.A, M. Dudley, B. Raghothamachar, Z. Chen, R.E Stahlbush, M. Hinojosa, A. Lelis, and W. Sung. Mechanism of Novel Defect Multiplication Impacting High Power 4H-SiC Devices. Elsevier.

MLA (9th ed.) Citation

Mahadik, N.A, et al. Mechanism of Novel Defect Multiplication Impacting High Power 4H-SiC Devices. Elsevier.