Development of technology for creating high-voltage p0–n0 junctions based on GaAs
An optimal solution has been found to the problem of obtaining p0-n0 junctions based on lightly doped GaAs layers with high values of electrical parameters and specified thicknesses of base layers to create ultra-fast high-voltage pulsed three-electrode switches with a photon injection mechanism of...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Academician Ye.A. Buketov Karaganda University
2023-12-01
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| Series: | Қарағанды университетінің хабаршысы. Физика сериясы |
| Subjects: | |
| Online Access: | https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/579 |
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