The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles
Cu(In,Ga)S2 nanoparticles were synthesized by a hot-injection method under a low-vacuum ambience, which were printed and annealed with Se vapor for Cu(In,Ga)(S,Se)2 solar cells. The Cu(In,Ga)S2 nanoparticles were around 14 nm, and the stable ink was obtained by dispersing the nanoparticles in hexane...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/416245 |
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| author | Duy-Cuong Nguyen Ken Fukatsu Keiji Tanimoto Shigeru Ikeda Michio Matsumura Seigo Ito |
| author_facet | Duy-Cuong Nguyen Ken Fukatsu Keiji Tanimoto Shigeru Ikeda Michio Matsumura Seigo Ito |
| author_sort | Duy-Cuong Nguyen |
| collection | DOAJ |
| description | Cu(In,Ga)S2 nanoparticles were synthesized by a hot-injection method under a low-vacuum ambience, which were printed and annealed with Se vapor for Cu(In,Ga)(S,Se)2 solar cells. The Cu(In,Ga)S2 nanoparticles were around 14 nm, and the stable ink was obtained by dispersing the nanoparticles in hexanethiol. The crystallinity of the Cu(In,Ga)(S,Se)2 films increased with the increase in annealing temperature. Cu(In,Ga)(S,Se)2 solar cells with KCN etching after annealing showed better photovoltaic properties than KCN etching before annealing and without etching. The best cell was observed at an annealing temperature of C and KCN etching after annealing; the parameters of this cell were a short-circuit photocurrent density of 27.12 mA/cm2, open-circuit voltage of 0.42 V, fill factor of 0.38, and conversion efficiency of 4.3%. |
| format | Article |
| id | doaj-art-7b3d6cedd9a248039ddc82bf501ea789 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-7b3d6cedd9a248039ddc82bf501ea7892025-08-20T02:07:02ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/416245416245The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using NanoparticlesDuy-Cuong Nguyen0Ken Fukatsu1Keiji Tanimoto2Shigeru Ikeda3Michio Matsumura4Seigo Ito5Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanResearch Center for Solar Energy Chemistry, Osaka University, Toyonaka 560-8531, JapanResearch Center for Solar Energy Chemistry, Osaka University, Toyonaka 560-8531, JapanDepartment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanCu(In,Ga)S2 nanoparticles were synthesized by a hot-injection method under a low-vacuum ambience, which were printed and annealed with Se vapor for Cu(In,Ga)(S,Se)2 solar cells. The Cu(In,Ga)S2 nanoparticles were around 14 nm, and the stable ink was obtained by dispersing the nanoparticles in hexanethiol. The crystallinity of the Cu(In,Ga)(S,Se)2 films increased with the increase in annealing temperature. Cu(In,Ga)(S,Se)2 solar cells with KCN etching after annealing showed better photovoltaic properties than KCN etching before annealing and without etching. The best cell was observed at an annealing temperature of C and KCN etching after annealing; the parameters of this cell were a short-circuit photocurrent density of 27.12 mA/cm2, open-circuit voltage of 0.42 V, fill factor of 0.38, and conversion efficiency of 4.3%.http://dx.doi.org/10.1155/2013/416245 |
| spellingShingle | Duy-Cuong Nguyen Ken Fukatsu Keiji Tanimoto Shigeru Ikeda Michio Matsumura Seigo Ito The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles International Journal of Photoenergy |
| title | The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles |
| title_full | The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles |
| title_fullStr | The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles |
| title_full_unstemmed | The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles |
| title_short | The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles |
| title_sort | effect of annealing temperature and kcn etching on the photovoltaic properties of cu in ga s se 2 solar cells using nanoparticles |
| url | http://dx.doi.org/10.1155/2013/416245 |
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