Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD
This study examined the effects of film thickness on the nanostructural, chemical, and mechanical features of nc-Si:H films deposited by plasma-enhanced chemical vapor deposition. SiH4 and H2 were used as the source gases, and the deposition time was varied from 10 to 360 min. The mean nanocrystalli...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/643895 |
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| _version_ | 1832564482582249472 |
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| author | Jong-Ick Son Hee-Jong Nam Nam-Hee Cho |
| author_facet | Jong-Ick Son Hee-Jong Nam Nam-Hee Cho |
| author_sort | Jong-Ick Son |
| collection | DOAJ |
| description | This study examined the effects of film thickness on the nanostructural, chemical, and mechanical features of nc-Si:H films deposited by plasma-enhanced chemical vapor deposition. SiH4 and H2 were used as the source gases, and the deposition time was varied from 10 to 360 min. The mean nanocrystallites size in the Si films increased from ~6 to ~8 nm with increasing film thickness from 85 to 4150 nm. Moreover, the nanocrystallite concentration and elastic modulus increased from ~7.5 to ~45% and from 135 to 147 Gpa, respectively. In the 4150 nm thick film, the relative volume fraction of Si nanocrystallites and relative fraction of Si–H bonds in the films were approximately ~45% and ~74.5%, respectively. |
| format | Article |
| id | doaj-art-7b19af245d754a25bccf912ecf819050 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-7b19af245d754a25bccf912ecf8190502025-02-03T01:10:52ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/643895643895Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVDJong-Ick Son0Hee-Jong Nam1Nam-Hee Cho2Department of Materials Science and Engineering, Inha University, Incheon, Republic of KoreaDepartment of Materials Science and Engineering, Inha University, Incheon, Republic of KoreaDepartment of Materials Science and Engineering, Inha University, Incheon, Republic of KoreaThis study examined the effects of film thickness on the nanostructural, chemical, and mechanical features of nc-Si:H films deposited by plasma-enhanced chemical vapor deposition. SiH4 and H2 were used as the source gases, and the deposition time was varied from 10 to 360 min. The mean nanocrystallites size in the Si films increased from ~6 to ~8 nm with increasing film thickness from 85 to 4150 nm. Moreover, the nanocrystallite concentration and elastic modulus increased from ~7.5 to ~45% and from 135 to 147 Gpa, respectively. In the 4150 nm thick film, the relative volume fraction of Si nanocrystallites and relative fraction of Si–H bonds in the films were approximately ~45% and ~74.5%, respectively.http://dx.doi.org/10.1155/2012/643895 |
| spellingShingle | Jong-Ick Son Hee-Jong Nam Nam-Hee Cho Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD International Journal of Photoenergy |
| title | Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD |
| title_full | Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD |
| title_fullStr | Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD |
| title_full_unstemmed | Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD |
| title_short | Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD |
| title_sort | nanostructural chemical and mechanical features of nc si h films prepared by pecvd |
| url | http://dx.doi.org/10.1155/2012/643895 |
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