Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response
Abstract Charge manipulation is crucial in optoelectronic devices. The unoptimized interfacial charge injection/extraction in solution‐processed bulk‐heterojunction (BHJ) organic photodetectors (OPDs) presents significant challenges in achieving high detectivity and fast response speed. Here, we fir...
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| Format: | Article |
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Wiley
2024-12-01
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| Series: | SmartMat |
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| Online Access: | https://doi.org/10.1002/smm2.1310 |
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| _version_ | 1850112521155903488 |
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| author | Tingbin Yang Jun Yan Li Gong Wentao Zhong Bulin Chen Liang Shen Jisheng Pan Jenny Nelson Yongye Liang |
| author_facet | Tingbin Yang Jun Yan Li Gong Wentao Zhong Bulin Chen Liang Shen Jisheng Pan Jenny Nelson Yongye Liang |
| author_sort | Tingbin Yang |
| collection | DOAJ |
| description | Abstract Charge manipulation is crucial in optoelectronic devices. The unoptimized interfacial charge injection/extraction in solution‐processed bulk‐heterojunction (BHJ) organic photodetectors (OPDs) presents significant challenges in achieving high detectivity and fast response speed. Here, we first develop an approach for intrinsic charge manipulation induced by molecularly engineered donors to block electron injection and facilitate hole extraction between the indium tin oxide (ITO) transparent anode and the photoactive layer. By utilizing a polymer donor with 3,4‐ethylenedioxythiophene (EDOT) as the conjugated side chain, a polymer‐rich layer forms spontaneously on the ITO substrate due to the increased oxygen interactions between ITO and EDOT. This results in electron‐blocking‐layer (EBL)‐free devices with lower dark current and noise without a reduction in responsivity compared to control devices. As a result, the EBL‐free devices exhibit a peak specific detectivity of 2.36 × 1013 Jones at 950 nm and achieve a −3 dB bandwidth of 30 MHz under −1 V. Enhanced stability is also observed compared to the devices with poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). This work demonstrates a new method to intrinsically manipulate charge injection in BHJ photoactive layers, enabling the fabrication of solution‐processed EBL‐free OPDs with high sensitivity, rapid response, and good stability. |
| format | Article |
| id | doaj-art-7a51a33b08914bc29ddf2935dfca7e1b |
| institution | OA Journals |
| issn | 2688-819X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | SmartMat |
| spelling | doaj-art-7a51a33b08914bc29ddf2935dfca7e1b2025-08-20T02:37:21ZengWileySmartMat2688-819X2024-12-0156n/an/a10.1002/smm2.1310Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast responseTingbin Yang0Jun Yan1Li Gong2Wentao Zhong3Bulin Chen4Liang Shen5Jisheng Pan6Jenny Nelson7Yongye Liang8Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen ChinaSchool of Science and Engineering The Chinese University of Hong Kong Shenzhen ChinaInstrumental Analysis & Research Center Sun Yat‐Sen University Guangzhou ChinaShenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen ChinaShenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen ChinaDepartment of Microelectronic Science and Engineering Jilin University Changchun ChinaInstitute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) Singapore SingaporeDepartment of Physics and Centre for Plastic Electronics Imperial College London London UKShenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen ChinaAbstract Charge manipulation is crucial in optoelectronic devices. The unoptimized interfacial charge injection/extraction in solution‐processed bulk‐heterojunction (BHJ) organic photodetectors (OPDs) presents significant challenges in achieving high detectivity and fast response speed. Here, we first develop an approach for intrinsic charge manipulation induced by molecularly engineered donors to block electron injection and facilitate hole extraction between the indium tin oxide (ITO) transparent anode and the photoactive layer. By utilizing a polymer donor with 3,4‐ethylenedioxythiophene (EDOT) as the conjugated side chain, a polymer‐rich layer forms spontaneously on the ITO substrate due to the increased oxygen interactions between ITO and EDOT. This results in electron‐blocking‐layer (EBL)‐free devices with lower dark current and noise without a reduction in responsivity compared to control devices. As a result, the EBL‐free devices exhibit a peak specific detectivity of 2.36 × 1013 Jones at 950 nm and achieve a −3 dB bandwidth of 30 MHz under −1 V. Enhanced stability is also observed compared to the devices with poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). This work demonstrates a new method to intrinsically manipulate charge injection in BHJ photoactive layers, enabling the fabrication of solution‐processed EBL‐free OPDs with high sensitivity, rapid response, and good stability.https://doi.org/10.1002/smm2.1310bulk‐heterojunctionelectron blocking layerfast responsehigh sensitivityorganic photodetectors |
| spellingShingle | Tingbin Yang Jun Yan Li Gong Wentao Zhong Bulin Chen Liang Shen Jisheng Pan Jenny Nelson Yongye Liang Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response SmartMat bulk‐heterojunction electron blocking layer fast response high sensitivity organic photodetectors |
| title | Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response |
| title_full | Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response |
| title_fullStr | Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response |
| title_full_unstemmed | Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response |
| title_short | Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response |
| title_sort | intrinsic charge manipulation for solution processed organic photodetectors with high sensitivity and fast response |
| topic | bulk‐heterojunction electron blocking layer fast response high sensitivity organic photodetectors |
| url | https://doi.org/10.1002/smm2.1310 |
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