Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
In this work, we report demonstration of optically-pumped single-mode deep-ultraviolet lasing actions operating at room temperature from ∼1-<italic>μ</italic>m 150-nm-thick undercut microdisks with AlN/Al<sub>0.35</sub>Ga <sub>0.65</s...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8038044/ |
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| Summary: | In this work, we report demonstration of optically-pumped single-mode deep-ultraviolet lasing actions operating at room temperature from ∼1-<italic>μ</italic>m 150-nm-thick undercut microdisks with AlN/Al<sub>0.35</sub>Ga <sub>0.65</sub>N (5.5 nm/2.5 nm) multiple quantum wells. These AlGaN-based microdisks are grown on Si substrate by metal-organic chemical vapor deposition. The lasing wavelength centers at ∼300.1 nm with the linewidth of ∼1.0 nm as the excitation exceeds the lasing threshold of ∼24.2 mJ/cm<sup>2</sup>. An emission coupling factor (<italic>β</italic>) of 9.2 × 10<sup>−2</sup> is estimated based on the light output characteristics of the AlN/AlGaN microdisks with increasing the pumping densities. Concurrently, a 100 meV blue-shift in the mode energy has also been observed. The lasing spectral peak is attributed to fundamental-order transverse-electric whispering-gallery modes, confirmed by three-dimensional finite-difference time-domain simulations. |
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| ISSN: | 1943-0655 |