A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials

A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials

This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa<sub>1−x</sub>As/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on s...

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Bibliographic Details
Main Authors: Nesrine Bakalem, Abdelkader Aissat, Samuel Dupont, Faouzi Saidi, Mohamed Houcine Dhaou, Jean Pierre Vilcot
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Micromachines
Subjects:
materials
semiconductors III-V
p-i-n photodiode
detection
optoelectronic
Online Access:https://www.mdpi.com/2072-666X/16/7/764
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