A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials
This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa<sub>1−x</sub>As/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on s...
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MDPI AG
2025-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/7/764 |
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| author | Nesrine Bakalem Abdelkader Aissat Samuel Dupont Faouzi Saidi Mohamed Houcine Dhaou Jean Pierre Vilcot |
| author_facet | Nesrine Bakalem Abdelkader Aissat Samuel Dupont Faouzi Saidi Mohamed Houcine Dhaou Jean Pierre Vilcot |
| author_sort | Nesrine Bakalem |
| collection | DOAJ |
| description | This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa<sub>1−x</sub>As/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E<sub>g</sub>), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E<sub>g</sub> were also studied. Finally, we optimized the cutoff frequency (f<sub>c</sub>), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode. |
| format | Article |
| id | doaj-art-796aa95c573b4bb78d1c6bd37c63db89 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-796aa95c573b4bb78d1c6bd37c63db892025-08-20T03:58:26ZengMDPI AGMicromachines2072-666X2025-06-0116776410.3390/mi16070764A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP MaterialsNesrine Bakalem0Abdelkader Aissat1Samuel Dupont2Faouzi Saidi3Mohamed Houcine Dhaou4Jean Pierre Vilcot5LATSI Laboratory, University Blida1, Blida 09000, AlgeriaLATSI Laboratory, University Blida1, Blida 09000, AlgeriaInstitute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, University of sciences and Technologies of Lille, 1Avenue Poincare, 60069, 59652 Villeneuve of Ascq, FranceMicro-Optoelectronics and Nanostructures Laboratory, Department of Physics, Faculty of Sciences of Monastir, University of Monastir, Environment Street, Monastir 5000, TunisiaDepartment of Physics, College of Science, Qassim University, P.O. Box 51452, Burayda Almolaydah 6644, Saudi ArabiaInstitute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, University of sciences and Technologies of Lille, 1Avenue Poincare, 60069, 59652 Villeneuve of Ascq, FranceThis investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa<sub>1−x</sub>As/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E<sub>g</sub>), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E<sub>g</sub> were also studied. Finally, we optimized the cutoff frequency (f<sub>c</sub>), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode.https://www.mdpi.com/2072-666X/16/7/764materialssemiconductors III-Vp-i-n photodiodedetectionoptoelectronic |
| spellingShingle | Nesrine Bakalem Abdelkader Aissat Samuel Dupont Faouzi Saidi Mohamed Houcine Dhaou Jean Pierre Vilcot A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials Micromachines materials semiconductors III-V p-i-n photodiode detection optoelectronic |
| title | A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials |
| title_full | A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials |
| title_fullStr | A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials |
| title_full_unstemmed | A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials |
| title_short | A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials |
| title_sort | theoretical analysis of the frequency response in p i n photodiodes that use ingaas inp materials |
| topic | materials semiconductors III-V p-i-n photodiode detection optoelectronic |
| url | https://www.mdpi.com/2072-666X/16/7/764 |
| work_keys_str_mv | AT nesrinebakalem atheoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT abdelkaderaissat atheoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT samueldupont atheoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT faouzisaidi atheoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT mohamedhoucinedhaou atheoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT jeanpierrevilcot atheoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT nesrinebakalem theoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT abdelkaderaissat theoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT samueldupont theoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT faouzisaidi theoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT mohamedhoucinedhaou theoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials AT jeanpierrevilcot theoreticalanalysisofthefrequencyresponseinpinphotodiodesthatuseingaasinpmaterials |