Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D
This study uses the SCAPS 1D software to analyze solar cells with lead iodide perovskite (CH3NH3PbI3) as the active material and three different types of ZnO doping: undoped (P_ZnO), aluminum-doped (Al_ZnO), and indium-doped (In_ZnO) as the electron transport layer (ETL). This study aims to investi...
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Universidade Federal de Viçosa (UFV)
2024-01-01
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| Series: | The Journal of Engineering and Exact Sciences |
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| Online Access: | https://periodicos.ufv.br/jcec/article/view/17387 |
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| author | Meriem Kerara Abdelkrim Naas Khalid Reggab |
| author_facet | Meriem Kerara Abdelkrim Naas Khalid Reggab |
| author_sort | Meriem Kerara |
| collection | DOAJ |
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This study uses the SCAPS 1D software to analyze solar cells with lead iodide perovskite (CH3NH3PbI3) as the active material and three different types of ZnO doping: undoped (P_ZnO), aluminum-doped (Al_ZnO), and indium-doped (In_ZnO) as the electron transport layer (ETL). This study aims to investigate the effects of charge carrier density on the J-V characteristics and electrical properties (Jsc, Voc, FF, Eff) of a solar cell structure made up of FTO/ETL/CH3NH3PbI3/CuInSe2/Au. Gold makes up the back contact, and tin oxide doped with fluorine (FTO) makes up the front contact. These two compounds have work roles are 5.47 eV and 4.4 eV respectively. Zinc oxide, both undoped and doped, makes up the electron transport layer, whereas methyl ammonium lead iodide makes up the absorber layer. Thin sheets, indium diselenide, and copper make up the hole transport layer. An optimal perovskite layer was obtained by decreasing the electron transportation layer's thickness (ETL) from 500 to 100 nm. For the In_ZnO ETL, this optimization was accomplished at 300K working temperature. Reduced ETL thickness was shown to result in higher efficiency (above 27%), as well as higher fill factor (above 87%). With a Voc value of 1.180V, a FF value of 87.55%, and a Jsc value of 26.276mA/cm2, the greatest efficiency performance of 27.15% was found. Using an absorber layer made of CH3NH3PbI3 with a thickness of 800 nm and indium-doped oxide of zinc (In_ZnO) is the layer that transports electrons, this performance was achieved. The results are obtained at a constant irradiance level of 1000 W/m2, under the AM1.5G spectrum.
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| format | Article |
| id | doaj-art-794b8e821ba94a1dbc59688971847668 |
| institution | Kabale University |
| issn | 2527-1075 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | Universidade Federal de Viçosa (UFV) |
| record_format | Article |
| series | The Journal of Engineering and Exact Sciences |
| spelling | doaj-art-794b8e821ba94a1dbc596889718476682025-02-02T19:54:03ZengUniversidade Federal de Viçosa (UFV)The Journal of Engineering and Exact Sciences2527-10752024-01-0110110.18540/jcecvl10iss1pp17387Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1DMeriem Kerara0Abdelkrim Naas1Khalid Reggab2Materials Science and Informatics Laboratory, Faculty of Science University of Djelfa Address: 17000, Djelfa, AlgeriaMaterials Science and Informatics Laboratory, Faculty of Science University of Djelfa Address: 17000, Djelfa, AlgeriaMaterials Science and Informatics Laboratory, Faculty of Science University of Djelfa Address: 17000, Djelfa, Algeria This study uses the SCAPS 1D software to analyze solar cells with lead iodide perovskite (CH3NH3PbI3) as the active material and three different types of ZnO doping: undoped (P_ZnO), aluminum-doped (Al_ZnO), and indium-doped (In_ZnO) as the electron transport layer (ETL). This study aims to investigate the effects of charge carrier density on the J-V characteristics and electrical properties (Jsc, Voc, FF, Eff) of a solar cell structure made up of FTO/ETL/CH3NH3PbI3/CuInSe2/Au. Gold makes up the back contact, and tin oxide doped with fluorine (FTO) makes up the front contact. These two compounds have work roles are 5.47 eV and 4.4 eV respectively. Zinc oxide, both undoped and doped, makes up the electron transport layer, whereas methyl ammonium lead iodide makes up the absorber layer. Thin sheets, indium diselenide, and copper make up the hole transport layer. An optimal perovskite layer was obtained by decreasing the electron transportation layer's thickness (ETL) from 500 to 100 nm. For the In_ZnO ETL, this optimization was accomplished at 300K working temperature. Reduced ETL thickness was shown to result in higher efficiency (above 27%), as well as higher fill factor (above 87%). With a Voc value of 1.180V, a FF value of 87.55%, and a Jsc value of 26.276mA/cm2, the greatest efficiency performance of 27.15% was found. Using an absorber layer made of CH3NH3PbI3 with a thickness of 800 nm and indium-doped oxide of zinc (In_ZnO) is the layer that transports electrons, this performance was achieved. The results are obtained at a constant irradiance level of 1000 W/m2, under the AM1.5G spectrum. https://periodicos.ufv.br/jcec/article/view/17387CH3NH3PbI3. ZnO. SCAPS-1D. Carrier concentration. Thickness. Aluminum doped ZnO. Indium doped ZnO. |
| spellingShingle | Meriem Kerara Abdelkrim Naas Khalid Reggab Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D The Journal of Engineering and Exact Sciences CH3NH3PbI3. ZnO. SCAPS-1D. Carrier concentration. Thickness. Aluminum doped ZnO. Indium doped ZnO. |
| title | Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D |
| title_full | Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D |
| title_fullStr | Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D |
| title_full_unstemmed | Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D |
| title_short | Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D |
| title_sort | comparative study on perovskite solar cells using p zno al zno and in zno as etms by scaps 1d |
| topic | CH3NH3PbI3. ZnO. SCAPS-1D. Carrier concentration. Thickness. Aluminum doped ZnO. Indium doped ZnO. |
| url | https://periodicos.ufv.br/jcec/article/view/17387 |
| work_keys_str_mv | AT meriemkerara comparativestudyonperovskitesolarcellsusingpznoalznoandinznoasetmsbyscaps1d AT abdelkrimnaas comparativestudyonperovskitesolarcellsusingpznoalznoandinznoasetmsbyscaps1d AT khalidreggab comparativestudyonperovskitesolarcellsusingpznoalznoandinznoasetmsbyscaps1d |