Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance
Ultraviolet (UV) detectors have been widely applied to extensive fields, such as photoelectric microsensors, UV imaging, optical communications, and biological detection. The demand for high-performance UV detectors with low cost and easy fabrication drives the development of novel materials and str...
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| Language: | English |
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American Association for the Advancement of Science (AAAS)
2025-01-01
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| Series: | Advanced Devices & Instrumentation |
| Online Access: | https://spj.science.org/doi/10.34133/adi.0001 |
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| author | Jin Li Xin Chang Shunpu Li Yi Zhang Daping Chu |
| author_facet | Jin Li Xin Chang Shunpu Li Yi Zhang Daping Chu |
| author_sort | Jin Li |
| collection | DOAJ |
| description | Ultraviolet (UV) detectors have been widely applied to extensive fields, such as photoelectric microsensors, UV imaging, optical communications, and biological detection. The demand for high-performance UV detectors with low cost and easy fabrication drives the development of novel materials and structures such as wide-bandgap semiconductors, polymers, photodiodes, and phototransistors. Here, we demonstrate a new UV photodiode implemented using solution-processing-based zinc oxide (ZnO) nanoparticles (NPs) and a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) heterojunction. Moreover, the fabrication process is simple and suitable for large-scale production. First, solution-based films of ZnO NPs and PEDOT:PSS were prepared, and their optical and electrical properties were individually characterized. Strong optical absorption by ZnO NPs for wavelengths below 400 nm was experimentally observed, while absorption by PEDOT:PSS in the same wavelength range is trivial. The ZnO-NPs-PEDOT:PSS heterojunction was then characterized for its electrical rectification behavior and photoresponse, from which a potential barrier height of 0.64 eV and UV current gain of 91.2 were determined. The resistor–capacitor time constant was also calculated to be 946.46 ms at zero bias, and its dependence on reverse bias voltage was determined. Finally, negative capacitance was first observed in this kind of heterojunctions under forwarding bias, which was further investigated regarding a threshold effect and transition frequency. This new type of UV photodiodes based on ZnO-NPs-PEDOT:PSS heterojunctions is highly promising for high-resolution applications, such as ZnO NPs-based spatial light modulators (SLMs), where the ascendant properties of the heterojunction can be fully utilized to achieve the high-resolution capability of optically addressed SLMs. |
| format | Article |
| id | doaj-art-790e6ae32fe84d6b9ebea3ce72bff520 |
| institution | Kabale University |
| issn | 2767-9713 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | Article |
| series | Advanced Devices & Instrumentation |
| spelling | doaj-art-790e6ae32fe84d6b9ebea3ce72bff5202025-02-04T08:01:00ZengAmerican Association for the Advancement of Science (AAAS)Advanced Devices & Instrumentation2767-97132025-01-01610.34133/adi.0001Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative CapacitanceJin Li0Xin Chang1Shunpu Li2Yi Zhang3Daping Chu4Centre for Photonic Devices and Sensors, University of Cambridge, Cambridge CB3 0FA, UK.Centre for Photonic Devices and Sensors, University of Cambridge, Cambridge CB3 0FA, UK.College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.National Institute of Extremely Weak Magnetic Field Infrastructure, Hangzhou, China.Centre for Photonic Devices and Sensors, University of Cambridge, Cambridge CB3 0FA, UK.Ultraviolet (UV) detectors have been widely applied to extensive fields, such as photoelectric microsensors, UV imaging, optical communications, and biological detection. The demand for high-performance UV detectors with low cost and easy fabrication drives the development of novel materials and structures such as wide-bandgap semiconductors, polymers, photodiodes, and phototransistors. Here, we demonstrate a new UV photodiode implemented using solution-processing-based zinc oxide (ZnO) nanoparticles (NPs) and a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) heterojunction. Moreover, the fabrication process is simple and suitable for large-scale production. First, solution-based films of ZnO NPs and PEDOT:PSS were prepared, and their optical and electrical properties were individually characterized. Strong optical absorption by ZnO NPs for wavelengths below 400 nm was experimentally observed, while absorption by PEDOT:PSS in the same wavelength range is trivial. The ZnO-NPs-PEDOT:PSS heterojunction was then characterized for its electrical rectification behavior and photoresponse, from which a potential barrier height of 0.64 eV and UV current gain of 91.2 were determined. The resistor–capacitor time constant was also calculated to be 946.46 ms at zero bias, and its dependence on reverse bias voltage was determined. Finally, negative capacitance was first observed in this kind of heterojunctions under forwarding bias, which was further investigated regarding a threshold effect and transition frequency. This new type of UV photodiodes based on ZnO-NPs-PEDOT:PSS heterojunctions is highly promising for high-resolution applications, such as ZnO NPs-based spatial light modulators (SLMs), where the ascendant properties of the heterojunction can be fully utilized to achieve the high-resolution capability of optically addressed SLMs.https://spj.science.org/doi/10.34133/adi.0001 |
| spellingShingle | Jin Li Xin Chang Shunpu Li Yi Zhang Daping Chu Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance Advanced Devices & Instrumentation |
| title | Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance |
| title_full | Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance |
| title_fullStr | Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance |
| title_full_unstemmed | Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance |
| title_short | Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance |
| title_sort | solution based ultraviolet photodiode with zno nanoparticle poly 3 4 ethylenedioxythiophene polystyrene sulfonate heterojunction and negative capacitance |
| url | https://spj.science.org/doi/10.34133/adi.0001 |
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