Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)

Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)

This work presents the effect of grain boundaries in nanocrystalline silicon thin-film transistors (nc-Si TFT). In this study, it is assumed that the nanocrystalline silicon film which is used as the channel material in TFT consists of grain boundaries perpendicular as well as parallel to the carri...

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Bibliographic Details
Main Authors: Abhishek Mukherjee, Prachi Sharma, Navneet Gupta
Format: Article
Language:English
Published: Sumy State University 2014-01-01
Series:Журнал нано- та електронної фізики
Subjects:
Grain boundaries
Nanocrystalline silicon
TF
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04054.pdf
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