Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)
This work presents the effect of grain boundaries in nanocrystalline silicon thin-film transistors (nc-Si TFT). In this study, it is assumed that the nanocrystalline silicon film which is used as the channel material in TFT consists of grain boundaries perpendicular as well as parallel to the carri...
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| Format: | Article |
| Language: | English |
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Sumy State University
2014-01-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04054.pdf |
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| author | Abhishek Mukherjee Prachi Sharma Navneet Gupta |
| author_facet | Abhishek Mukherjee Prachi Sharma Navneet Gupta |
| author_sort | Abhishek Mukherjee |
| collection | DOAJ |
| description | This work presents the effect of grain boundaries in nanocrystalline silicon thin-film transistors (nc-Si TFT). In this study, it is assumed that the nanocrystalline silicon film which is used as the channel material in TFT consists of grain boundaries perpendicular as well as parallel to the carrier flow. Analytical model for mobility due to perpendicular GBs (perp) and mobility due to parallel GBs (parallel) are developed separately and then the overall (effective) mobility, FE, is calculated incorporating both type of GBs. Thereafter the overall (effective) mobility µFE and drain current are plotted as a function of gate voltage. The trend observed from the theoretical plot of drain current versus gate voltage is in agreement with the experimentally observed trend. |
| format | Article |
| id | doaj-art-78caec3c01fb4409b4b736b5c364d227 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-78caec3c01fb4409b4b736b5c364d2272025-08-20T02:07:28ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-01-015404054-104054-3Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)Abhishek Mukherjee0Prachi Sharma1Navneet Gupta2Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani-Campus, Rajasthan, 333031 IndiaDepartment of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani-Campus, Rajasthan, 333031 IndiaDepartment of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani-Campus, Rajasthan, 333031 IndiaThis work presents the effect of grain boundaries in nanocrystalline silicon thin-film transistors (nc-Si TFT). In this study, it is assumed that the nanocrystalline silicon film which is used as the channel material in TFT consists of grain boundaries perpendicular as well as parallel to the carrier flow. Analytical model for mobility due to perpendicular GBs (perp) and mobility due to parallel GBs (parallel) are developed separately and then the overall (effective) mobility, FE, is calculated incorporating both type of GBs. Thereafter the overall (effective) mobility µFE and drain current are plotted as a function of gate voltage. The trend observed from the theoretical plot of drain current versus gate voltage is in agreement with the experimentally observed trend.http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04054.pdfGrain boundariesNanocrystalline siliconTF |
| spellingShingle | Abhishek Mukherjee Prachi Sharma Navneet Gupta Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) Журнал нано- та електронної фізики Grain boundaries Nanocrystalline silicon TF |
| title | Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) |
| title_full | Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) |
| title_fullStr | Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) |
| title_full_unstemmed | Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) |
| title_short | Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) |
| title_sort | modeling of field effect mobility using grain boundaries on nanocrystalline silicon thin film transistor nc si tft |
| topic | Grain boundaries Nanocrystalline silicon TF |
| url | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04054.pdf |
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