Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module

Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module

It designed and packaged a 1 700 V/1 600 A hybrid power IGBT module. Common electrical characteristics were measured and compared with those of a similar all-Si power module. The superior reverse recovery performance of SiC-SBDs leads to an obvious promotion in the switching characteristics and a re...

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Bibliographic Details
Main Authors: ZHENG Changwei, CHANG Guiqin, LI Chengzhan
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2015-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
Silicon Carbide (SiC)
Schottky barrier diode (SBD)
IGBT
hybrid power module
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.05.009
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