Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors
We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room te...
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2025-06-01
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| author | Adam Rämer Edoardo Negri Eugen Dischke Serguei Chevchenko Hossein Yazdani Lars Schellhase Viktor Krozer Wolfgang Heinrich |
| author_facet | Adam Rämer Edoardo Negri Eugen Dischke Serguei Chevchenko Hossein Yazdani Lars Schellhase Viktor Krozer Wolfgang Heinrich |
| author_sort | Adam Rämer |
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| description | We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room temperature. Their architecture enables straightforward scaling to two-dimensional formats, paving the way for terahertz focal plane arrays (FPAs). In particular, for one detector type, a fully realized THz FPA has been demonstrated in this paper. Theoretical and experimental characterizations are provided for both single-pixel detectors (0.1–1.5 THz) and the FPA (0.1–1.1 THz). The broadband single detectors achieve optical sensitivities exceeding 20 mA/W up to 1 THz and NEP values below 100 pW/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msqrt><mi>Hz</mi></msqrt></semantics></math></inline-formula>. The best optical NEP is below 10 pW/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msqrt><mi>Hz</mi></msqrt></semantics></math></inline-formula> at 175 GHz. The reported sensitivity and NEP values were achieved including antenna and optical coupling losses, underlining the excellent overall performance of the detectors. |
| format | Article |
| id | doaj-art-7841e17fe2ae4ac09c44ff974bb6da47 |
| institution | Kabale University |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-06-01 |
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| spelling | doaj-art-7841e17fe2ae4ac09c44ff974bb6da472025-08-20T03:46:38ZengMDPI AGSensors1424-82202025-06-012511353910.3390/s25113539Monolithically Integrated THz Detectors Based on High-Electron-Mobility TransistorsAdam Rämer0Edoardo Negri1Eugen Dischke2Serguei Chevchenko3Hossein Yazdani4Lars Schellhase5Viktor Krozer6Wolfgang Heinrich7Ferdinand-Braun-Institut (FBH), 12489 Berlin, GermanyDepartment of Information Engineering, Electronics and Telecommunications, Sapienza University of Rome, 00184 Rome, ItalyFerdinand-Braun-Institut (FBH), 12489 Berlin, GermanyFerdinand-Braun-Institut (FBH), 12489 Berlin, GermanyFerdinand-Braun-Institut (FBH), 12489 Berlin, GermanyFerdinand-Braun-Institut (FBH), 12489 Berlin, GermanyFerdinand-Braun-Institut (FBH), 12489 Berlin, GermanyFerdinand-Braun-Institut (FBH), 12489 Berlin, GermanyWe present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room temperature. Their architecture enables straightforward scaling to two-dimensional formats, paving the way for terahertz focal plane arrays (FPAs). In particular, for one detector type, a fully realized THz FPA has been demonstrated in this paper. Theoretical and experimental characterizations are provided for both single-pixel detectors (0.1–1.5 THz) and the FPA (0.1–1.1 THz). The broadband single detectors achieve optical sensitivities exceeding 20 mA/W up to 1 THz and NEP values below 100 pW/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msqrt><mi>Hz</mi></msqrt></semantics></math></inline-formula>. The best optical NEP is below 10 pW/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msqrt><mi>Hz</mi></msqrt></semantics></math></inline-formula> at 175 GHz. The reported sensitivity and NEP values were achieved including antenna and optical coupling losses, underlining the excellent overall performance of the detectors.https://www.mdpi.com/1424-8220/25/11/3539room-temperature THz direct detectorsTHz HEMT antenna integrationresistive mixingon-chip antennaTeraFET |
| spellingShingle | Adam Rämer Edoardo Negri Eugen Dischke Serguei Chevchenko Hossein Yazdani Lars Schellhase Viktor Krozer Wolfgang Heinrich Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors Sensors room-temperature THz direct detectors THz HEMT antenna integration resistive mixing on-chip antenna TeraFET |
| title | Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors |
| title_full | Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors |
| title_fullStr | Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors |
| title_full_unstemmed | Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors |
| title_short | Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors |
| title_sort | monolithically integrated thz detectors based on high electron mobility transistors |
| topic | room-temperature THz direct detectors THz HEMT antenna integration resistive mixing on-chip antenna TeraFET |
| url | https://www.mdpi.com/1424-8220/25/11/3539 |
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