Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium
The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that the...
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| Format: | Article |
| Language: | English |
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Sumy State University
2016-10-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/3/articles/Proof_jnep_2016_V8_03012.pdf |
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| _version_ | 1850220292883873792 |
|---|---|
| author | D.Yu. Matveev |
| author_facet | D.Yu. Matveev |
| author_sort | D.Yu. Matveev |
| collection | DOAJ |
| description | The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium. |
| format | Article |
| id | doaj-art-7821c8e6b9ca4d93af0e08f02e4d37f5 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2016-10-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-7821c8e6b9ca4d93af0e08f02e4d37f52025-08-20T02:07:08ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722016-10-018303012-103012-510.21272/jnep.8(3).03012Carrier Scattering Mechanisms in Bismuth Films Doped with TelluriumD.Yu. Matveev0Astrakhan State University, 20a, Tatischev st., 4140056 Astrakhan, RussiaThe article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium.http://jnep.sumdu.edu.ua/download/numbers/2016/3/articles/Proof_jnep_2016_V8_03012.pdfThin filmsBismuthTelluriumMobilitySize effec |
| spellingShingle | D.Yu. Matveev Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium Журнал нано- та електронної фізики Thin films Bismuth Tellurium Mobility Size effec |
| title | Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium |
| title_full | Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium |
| title_fullStr | Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium |
| title_full_unstemmed | Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium |
| title_short | Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium |
| title_sort | carrier scattering mechanisms in bismuth films doped with tellurium |
| topic | Thin films Bismuth Tellurium Mobility Size effec |
| url | http://jnep.sumdu.edu.ua/download/numbers/2016/3/articles/Proof_jnep_2016_V8_03012.pdf |
| work_keys_str_mv | AT dyumatveev carrierscatteringmechanismsinbismuthfilmsdopedwithtellurium |