Improved Resistive Switching Characteristics by O<sub>2</sub> Plasma Treatment in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> RRAM
In this study, a tri-layer HfO2/Al2O3/HfO2 (7/6/7 nm) structure was fabricated using a cost-effective RF sputtering process and treated with oxygen plasma to serve as the resistive switching (RS) active layer for RRAM devices. Compared with a single-layer HfO2 and an untreated tri-layer structure, t...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10974951/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this study, a tri-layer HfO2/Al2O3/HfO2 (7/6/7 nm) structure was fabricated using a cost-effective RF sputtering process and treated with oxygen plasma to serve as the resistive switching (RS) active layer for RRAM devices. Compared with a single-layer HfO2 and an untreated tri-layer structure, the oxygen plasma-treated device exhibited significantly enhanced performance. These improvements include a higher ON/OFF current ratio, extended endurance exceeding 1600 cycles, and stable retention beyond <inline-formula> <tex-math notation="LaTeX">$10^{4}$ </tex-math></inline-formula> seconds. Furthermore, multilevel resistive switching behavior was reliably demonstrated by modulating the compliance current. The results highlight the effectiveness of oxygen plasma treatment in improving switching uniformity and electrical stability, while maintaining a scalable and industry-friendly fabrication process. This work underscores the potential of plasma-treated tri-layer structures for high-density, multi-level non-volatile memory applications. |
|---|---|
| ISSN: | 2169-3536 |