Current instability phenomena in a tunnel diode and electron self-organization processes

In the article the mechanisms of electric instability in semiconductors are considered. The origin of negative differential conductivity of different types are described. On the example of functioning of the tunnel diode the mechanism of formation of the concentrated instability in semiconductors r...

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Main Authors: L.V. Chirkova, K.T. Ermaganbetov, K.M. Makhanov, K.S. Rozhkova, E.T. Arinova, A. Kurmash
Format: Article
Language:English
Published: Academician Ye.A. Buketov Karaganda University 2019-06-01
Series:Қарағанды университетінің хабаршысы. Физика сериясы
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Online Access:https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/290
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author L.V. Chirkova
K.T. Ermaganbetov
K.M. Makhanov
K.S. Rozhkova
E.T. Arinova
A. Kurmash
author_facet L.V. Chirkova
K.T. Ermaganbetov
K.M. Makhanov
K.S. Rozhkova
E.T. Arinova
A. Kurmash
author_sort L.V. Chirkova
collection DOAJ
description In the article the mechanisms of electric instability in semiconductors are considered. The origin of negative differential conductivity of different types are described. On the example of functioning of the tunnel diode the mechanism of formation of the concentrated instability in semiconductors resulting in N-shaped voltampere characteristic of the diode is considered. It is shown that the «semiconductor structure consisting of two layers of semiconductors with different type of conductivity and an external source of electric energy» system can be considered as an open non-equilibrium thermodynamic system in which self-organization processes are possible. Operation of the tunnel diode in terms of the theory of self-organization in semiconductor structures is analysed. Processes of self-organization are resulted by change of concentration of carriers of a charge in power zones of p- and n-semiconductors of types which make the tunnel diode and therefore the direction of streams of electrons changes. The description of the movement of carriers of a charge in the considered semiconductor structure at various values and external shift is given: in an equilibrium state, at the return shift; at the direct shift and tension which have values less peak value; and tension exceeding «voltage dip». In a thermodynamic non-equilibrium system there can be processes of self-organization of various nature — tunneling and injection of electrons. At the same time the direction of processes of self-organization is defined by features of power ranges of the semiconductors making the tunnel diode and intensity of interaction between system elements.
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language English
publishDate 2019-06-01
publisher Academician Ye.A. Buketov Karaganda University
record_format Article
series Қарағанды университетінің хабаршысы. Физика сериясы
spelling doaj-art-7768fb7731db4a0bba8aed6ec30ba4852025-08-20T02:27:49ZengAcademician Ye.A. Buketov Karaganda UniversityҚарағанды университетінің хабаршысы. Физика сериясы2518-71982663-50892019-06-0194210.31489/2019ph2/8-13Current instability phenomena in a tunnel diode and electron self-organization processes L.V. ChirkovaK.T. ErmaganbetovK.M. MakhanovK.S. RozhkovaE.T. ArinovaA. Kurmash In the article the mechanisms of electric instability in semiconductors are considered. The origin of negative differential conductivity of different types are described. On the example of functioning of the tunnel diode the mechanism of formation of the concentrated instability in semiconductors resulting in N-shaped voltampere characteristic of the diode is considered. It is shown that the «semiconductor structure consisting of two layers of semiconductors with different type of conductivity and an external source of electric energy» system can be considered as an open non-equilibrium thermodynamic system in which self-organization processes are possible. Operation of the tunnel diode in terms of the theory of self-organization in semiconductor structures is analysed. Processes of self-organization are resulted by change of concentration of carriers of a charge in power zones of p- and n-semiconductors of types which make the tunnel diode and therefore the direction of streams of electrons changes. The description of the movement of carriers of a charge in the considered semiconductor structure at various values and external shift is given: in an equilibrium state, at the return shift; at the direct shift and tension which have values less peak value; and tension exceeding «voltage dip». In a thermodynamic non-equilibrium system there can be processes of self-organization of various nature — tunneling and injection of electrons. At the same time the direction of processes of self-organization is defined by features of power ranges of the semiconductors making the tunnel diode and intensity of interaction between system elements. https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/290self-organizationsemiconductorelectric instabilitytunnel diodenegative differential conductivity
spellingShingle L.V. Chirkova
K.T. Ermaganbetov
K.M. Makhanov
K.S. Rozhkova
E.T. Arinova
A. Kurmash
Current instability phenomena in a tunnel diode and electron self-organization processes
Қарағанды университетінің хабаршысы. Физика сериясы
self-organization
semiconductor
electric instability
tunnel diode
negative differential conductivity
title Current instability phenomena in a tunnel diode and electron self-organization processes
title_full Current instability phenomena in a tunnel diode and electron self-organization processes
title_fullStr Current instability phenomena in a tunnel diode and electron self-organization processes
title_full_unstemmed Current instability phenomena in a tunnel diode and electron self-organization processes
title_short Current instability phenomena in a tunnel diode and electron self-organization processes
title_sort current instability phenomena in a tunnel diode and electron self organization processes
topic self-organization
semiconductor
electric instability
tunnel diode
negative differential conductivity
url https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/290
work_keys_str_mv AT lvchirkova currentinstabilityphenomenainatunneldiodeandelectronselforganizationprocesses
AT ktermaganbetov currentinstabilityphenomenainatunneldiodeandelectronselforganizationprocesses
AT kmmakhanov currentinstabilityphenomenainatunneldiodeandelectronselforganizationprocesses
AT ksrozhkova currentinstabilityphenomenainatunneldiodeandelectronselforganizationprocesses
AT etarinova currentinstabilityphenomenainatunneldiodeandelectronselforganizationprocesses
AT akurmash currentinstabilityphenomenainatunneldiodeandelectronselforganizationprocesses