Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon
Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu3+ doped Y2O3 on silicon. We combi...
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| Format: | Article |
| Language: | English |
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De Gruyter
2025-02-01
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| Series: | Nanophotonics |
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| Online Access: | https://doi.org/10.1515/nanoph-2024-0682 |
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| author | Serrano Diana Harada Nao Bachelet Romain Blin Anna Ferrier Alban Tiranov Alexey Zhong Tian Goldner Philippe Tallaire Alexandre |
| author_facet | Serrano Diana Harada Nao Bachelet Romain Blin Anna Ferrier Alban Tiranov Alexey Zhong Tian Goldner Philippe Tallaire Alexandre |
| author_sort | Serrano Diana |
| collection | DOAJ |
| description | Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu3+ doped Y2O3 on silicon. We combine two of the most prominent thin film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We report sub-megahertz optical homogeneous linewidths up to 8 K for the Eu3+ dopants in the film, and lowest value of 270 kHz. This result constitutes a ten-fold improvement with respect to previous reports on the same material, opening promising perspectives for the development of scalable and compact quantum devices containing rare-earth ions. |
| format | Article |
| id | doaj-art-77543c0d1e5c4ec187bf51ccf2e88a1f |
| institution | DOAJ |
| issn | 2192-8614 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj-art-77543c0d1e5c4ec187bf51ccf2e88a1f2025-08-20T03:20:13ZengDe GruyterNanophotonics2192-86142025-02-0114111809181510.1515/nanoph-2024-0682Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on siliconSerrano Diana0Harada Nao1Bachelet Romain2Blin Anna3Ferrier Alban4Tiranov Alexey5Zhong Tian6Goldner Philippe7Tallaire Alexandre8129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, France129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, FranceINL, Université de Lyon, Ecole Centrale de Lyon, CNRS UMR 5270, 69134Ecully, France129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, France129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, France129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, FrancePritzker School of Molecular Engineering, University of Chicago, 60637, Chicago, IL, USA129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, France129667Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, F-75005Paris, FranceThin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu3+ doped Y2O3 on silicon. We combine two of the most prominent thin film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We report sub-megahertz optical homogeneous linewidths up to 8 K for the Eu3+ dopants in the film, and lowest value of 270 kHz. This result constitutes a ten-fold improvement with respect to previous reports on the same material, opening promising perspectives for the development of scalable and compact quantum devices containing rare-earth ions.https://doi.org/10.1515/nanoph-2024-0682thin filmrare-earthhomogeneous linewidthquantum technologies |
| spellingShingle | Serrano Diana Harada Nao Bachelet Romain Blin Anna Ferrier Alban Tiranov Alexey Zhong Tian Goldner Philippe Tallaire Alexandre Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon Nanophotonics thin film rare-earth homogeneous linewidth quantum technologies |
| title | Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon |
| title_full | Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon |
| title_fullStr | Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon |
| title_full_unstemmed | Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon |
| title_short | Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon |
| title_sort | sub mhz homogeneous linewidth in epitaxial y2o3 eu3 thin film on silicon |
| topic | thin film rare-earth homogeneous linewidth quantum technologies |
| url | https://doi.org/10.1515/nanoph-2024-0682 |
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