Sub-MHz homogeneous linewidth in epitaxial Y2O3: Eu3+ thin film on silicon
Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu3+ doped Y2O3 on silicon. We combi...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2025-02-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2024-0682 |
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| Summary: | Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu3+ doped Y2O3 on silicon. We combine two of the most prominent thin film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We report sub-megahertz optical homogeneous linewidths up to 8 K for the Eu3+ dopants in the film, and lowest value of 270 kHz. This result constitutes a ten-fold improvement with respect to previous reports on the same material, opening promising perspectives for the development of scalable and compact quantum devices containing rare-earth ions. |
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| ISSN: | 2192-8614 |