Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level

Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level

In this paper, the sensitivity to sub-ppm NO<sub>2</sub> concentration of 50 nm thick Ga-doped ZnO (GZO) films grown by RF magnetron sputtering is studied. The films were annealed under dry air for 4 h at either 500 °C, 600 °C, or 700 °C. The increase in the annealing temperature leads t...

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Bibliographic Details
Main Authors: Benjamin Paret, Richard Monflier, Philippe Menini, Thierry Camps, Yohann Thimont, Antoine Barnabé, Lionel Presmanes
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Chemosensors
Subjects:
NO<sub>2</sub> sensing
gallium-doped zinc oxide
thin films
sputtering
ppb level
photoluminescence
Online Access:https://www.mdpi.com/2227-9040/13/1/1
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