Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level
In this paper, the sensitivity to sub-ppm NO<sub>2</sub> concentration of 50 nm thick Ga-doped ZnO (GZO) films grown by RF magnetron sputtering is studied. The films were annealed under dry air for 4 h at either 500 °C, 600 °C, or 700 °C. The increase in the annealing temperature leads t...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
|
| Series: | Chemosensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2227-9040/13/1/1 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832588843636752384 |
|---|---|
| author | Benjamin Paret Richard Monflier Philippe Menini Thierry Camps Yohann Thimont Antoine Barnabé Lionel Presmanes |
| author_facet | Benjamin Paret Richard Monflier Philippe Menini Thierry Camps Yohann Thimont Antoine Barnabé Lionel Presmanes |
| author_sort | Benjamin Paret |
| collection | DOAJ |
| description | In this paper, the sensitivity to sub-ppm NO<sub>2</sub> concentration of 50 nm thick Ga-doped ZnO (GZO) films grown by RF magnetron sputtering is studied. The films were annealed under dry air for 4 h at either 500 °C, 600 °C, or 700 °C. The increase in the annealing temperature leads to an improvement of the crystallinity while no significant evolution of the surface grain size is observed. The electrical resistance of the thin films was measured at 250 °C under neutral argon atmosphere, humid air reference atmosphere, and reference atmosphere polluted by 100 ppb of NO<sub>2</sub>. An increase in sensitivity to NO<sub>2</sub> is noted for samples annealed at 600 °C, leading to a response R<sub>NO2</sub>/R<sub>air</sub> of ~10 for 100 ppb of NO<sub>2</sub>. Finally, photoluminescence spectra are compared with their electrical resistance at 250 °C under the various atmospheres to understand this phenomenon. It is proposed that the origin of the NO<sub>2</sub> maximum sensitivity for films annealed at 600 °C is the consequence of a specific annihilation of point defects resulting in an increase in the relative concentration of oxygen vacancies, which improves selectivity toward NO<sub>2</sub>. |
| format | Article |
| id | doaj-art-770bebeecdc74951b2b0ab7136c89974 |
| institution | Kabale University |
| issn | 2227-9040 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Chemosensors |
| spelling | doaj-art-770bebeecdc74951b2b0ab7136c899742025-01-24T13:26:51ZengMDPI AGChemosensors2227-90402024-12-01131110.3390/chemosensors13010001Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb LevelBenjamin Paret0Richard Monflier1Philippe Menini2Thierry Camps3Yohann Thimont4Antoine Barnabé5Lionel Presmanes6Centre Inter-Universitaire de Recherche et d’Ingénierie des Matériaux (CIRIMAT), Université Toulouse 3 Paul Sabatier, Toulouse Institut National Polytechnique (INP), Centre National de la Recherche Scientifique (CNRS), Université de Toulouse, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, FranceLaboratoire d’Analyse et d’Architecture des Systèmes (LAAS), Université de Toulouse, Centre National de la Recherche Scientifique (CNRS), Université Toulouse 3 Paul Sabatier, 7 Av Colonel Roche, CEDEX 4, 31031 Toulouse, FranceLaboratoire d’Analyse et d’Architecture des Systèmes (LAAS), Université de Toulouse, Centre National de la Recherche Scientifique (CNRS), Université Toulouse 3 Paul Sabatier, 7 Av Colonel Roche, CEDEX 4, 31031 Toulouse, FranceLaboratoire d’Analyse et d’Architecture des Systèmes (LAAS), Université de Toulouse, Centre National de la Recherche Scientifique (CNRS), Université Toulouse 3 Paul Sabatier, 7 Av Colonel Roche, CEDEX 4, 31031 Toulouse, FranceCentre Inter-Universitaire de Recherche et d’Ingénierie des Matériaux (CIRIMAT), Université Toulouse 3 Paul Sabatier, Toulouse Institut National Polytechnique (INP), Centre National de la Recherche Scientifique (CNRS), Université de Toulouse, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, FranceCentre Inter-Universitaire de Recherche et d’Ingénierie des Matériaux (CIRIMAT), Université Toulouse 3 Paul Sabatier, Toulouse Institut National Polytechnique (INP), Centre National de la Recherche Scientifique (CNRS), Université de Toulouse, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, FranceCentre Inter-Universitaire de Recherche et d’Ingénierie des Matériaux (CIRIMAT), Université Toulouse 3 Paul Sabatier, Toulouse Institut National Polytechnique (INP), Centre National de la Recherche Scientifique (CNRS), Université de Toulouse, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, FranceIn this paper, the sensitivity to sub-ppm NO<sub>2</sub> concentration of 50 nm thick Ga-doped ZnO (GZO) films grown by RF magnetron sputtering is studied. The films were annealed under dry air for 4 h at either 500 °C, 600 °C, or 700 °C. The increase in the annealing temperature leads to an improvement of the crystallinity while no significant evolution of the surface grain size is observed. The electrical resistance of the thin films was measured at 250 °C under neutral argon atmosphere, humid air reference atmosphere, and reference atmosphere polluted by 100 ppb of NO<sub>2</sub>. An increase in sensitivity to NO<sub>2</sub> is noted for samples annealed at 600 °C, leading to a response R<sub>NO2</sub>/R<sub>air</sub> of ~10 for 100 ppb of NO<sub>2</sub>. Finally, photoluminescence spectra are compared with their electrical resistance at 250 °C under the various atmospheres to understand this phenomenon. It is proposed that the origin of the NO<sub>2</sub> maximum sensitivity for films annealed at 600 °C is the consequence of a specific annihilation of point defects resulting in an increase in the relative concentration of oxygen vacancies, which improves selectivity toward NO<sub>2</sub>.https://www.mdpi.com/2227-9040/13/1/1NO<sub>2</sub> sensinggallium-doped zinc oxidethin filmssputteringppb levelphotoluminescence |
| spellingShingle | Benjamin Paret Richard Monflier Philippe Menini Thierry Camps Yohann Thimont Antoine Barnabé Lionel Presmanes Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level Chemosensors NO<sub>2</sub> sensing gallium-doped zinc oxide thin films sputtering ppb level photoluminescence |
| title | Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level |
| title_full | Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level |
| title_fullStr | Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level |
| title_full_unstemmed | Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level |
| title_short | Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO<sub>2</sub> Sensing at ppb Level |
| title_sort | study of the influence of thermal annealing of ga doped zno thin films on no sub 2 sub sensing at ppb level |
| topic | NO<sub>2</sub> sensing gallium-doped zinc oxide thin films sputtering ppb level photoluminescence |
| url | https://www.mdpi.com/2227-9040/13/1/1 |
| work_keys_str_mv | AT benjaminparet studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel AT richardmonflier studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel AT philippemenini studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel AT thierrycamps studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel AT yohannthimont studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel AT antoinebarnabe studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel AT lionelpresmanes studyoftheinfluenceofthermalannealingofgadopedznothinfilmsonnosub2subsensingatppblevel |