Electrophysical and structural properties of n-ZnS/p-CdTe heterojunctions
Electrophysical and structural properties of ZnS/CdTe film heterojunctions obtained by the sublimation method in quasi-closed volume at different growth conditions have been studied in this work. As a result, the ideality factors, saturation currents, potential barriers and the charge-transport mech...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2009-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2009/3/articles/en/jnep_eng_2009_V1_N3_25-36.pdf |
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| Summary: | Electrophysical and structural properties of ZnS/CdTe film heterojunctions obtained by the sublimation method in quasi-closed volume at different growth conditions have been studied in this work. As a result, the ideality factors, saturation currents, potential barriers and the charge-transport mechanisms of these heterostructures are found. Structural investigations allowed to determine the texture type of the films, their phase composition, the lattice parameters, and the dependence of these parameters on the growth conditions as well. Shown, that on the interface of heterosystems obtained at the substrate temperatures Ts > 773 К the solid solutions with certain chemical composition are formed. |
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| ISSN: | 2077-6772 |