Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy
Abstract Vanadium dioxide ( $$\hbox {VO}_2$$ ) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. It makes possible application...
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-87573-9 |
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| author | Arsenii A. Gavdush Vladislav A. Zhelnov Kirill B. Dolganov Alexander A. Bogutskii Sergey V. Garnov Maria G. Burdanova Dmitry S. Ponomarev Qiwu Shi Kirill I. Zaytsev Gennadii A. Komandin |
| author_facet | Arsenii A. Gavdush Vladislav A. Zhelnov Kirill B. Dolganov Alexander A. Bogutskii Sergey V. Garnov Maria G. Burdanova Dmitry S. Ponomarev Qiwu Shi Kirill I. Zaytsev Gennadii A. Komandin |
| author_sort | Arsenii A. Gavdush |
| collection | DOAJ |
| description | Abstract Vanadium dioxide ( $$\hbox {VO}_2$$ ) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. It makes possible applications of such a phase-change material in the ultra-fast optoelectronics and terahertz (THz) technology. Despite the considerable interest to this material, data on its broadband electrodynamic response in different states are still missing in the literature. This hampers the design and implementation of the $$\hbox {VO}_2$$ -based devices. In this paper, we combine the Fourier-transform infrared (FTIR) spectroscopy, THz pulsed spectroscopy (TPS), and four-contact probe method to study the $$\hbox {VO}_2$$ films prepared by magnetron sputtering on a c-cut sapphire substrate. Considering different temperatures of a substrate and pressures of atmosphere, we reconstruct complex dielectric permittivity of $$\hbox {VO}_2$$ film in the frequency range of 0.2–150 THz, along with its static conductivity. The dielectric response is modeled using Lorentz and Drude kernels, which make possible splitting contributions from vibrational modes and free charge carriers to the total dynamic conductivity. By studying $$\hbox {VO}_2$$ at different substrate temperatures and atmosphere pressures, we show that IMT appears to be pressure-dependent, which we attribute to the different thermostatic conditions of a sample. Finally, we estimate somewhat optimal thickness and temperature of the $$\hbox {VO}_2$$ film in metallic phase for the THz optoelectronic applications. Our finding should be useful for further developments of the $$\hbox {VO}_2$$ -based devices and technologies. |
| format | Article |
| id | doaj-art-76aee4e3fde849909118feec82817808 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-76aee4e3fde849909118feec828178082025-02-02T12:15:43ZengNature PortfolioScientific Reports2045-23222025-01-0115111310.1038/s41598-025-87573-9Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopyArsenii A. Gavdush0Vladislav A. Zhelnov1Kirill B. Dolganov2Alexander A. Bogutskii3Sergey V. Garnov4Maria G. Burdanova5Dmitry S. Ponomarev6Qiwu Shi7Kirill I. Zaytsev8Gennadii A. Komandin9Prokhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesCenter for Photonics and 2D Materials, Moscow Institute of Physics and TechnologyInstitute of Ultra-High Frequency Semiconductor Electronics of the Russian Academy of SciencesCollege of Materials Science and Engineering, Sichuan UniversityProkhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesAbstract Vanadium dioxide ( $$\hbox {VO}_2$$ ) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. It makes possible applications of such a phase-change material in the ultra-fast optoelectronics and terahertz (THz) technology. Despite the considerable interest to this material, data on its broadband electrodynamic response in different states are still missing in the literature. This hampers the design and implementation of the $$\hbox {VO}_2$$ -based devices. In this paper, we combine the Fourier-transform infrared (FTIR) spectroscopy, THz pulsed spectroscopy (TPS), and four-contact probe method to study the $$\hbox {VO}_2$$ films prepared by magnetron sputtering on a c-cut sapphire substrate. Considering different temperatures of a substrate and pressures of atmosphere, we reconstruct complex dielectric permittivity of $$\hbox {VO}_2$$ film in the frequency range of 0.2–150 THz, along with its static conductivity. The dielectric response is modeled using Lorentz and Drude kernels, which make possible splitting contributions from vibrational modes and free charge carriers to the total dynamic conductivity. By studying $$\hbox {VO}_2$$ at different substrate temperatures and atmosphere pressures, we show that IMT appears to be pressure-dependent, which we attribute to the different thermostatic conditions of a sample. Finally, we estimate somewhat optimal thickness and temperature of the $$\hbox {VO}_2$$ film in metallic phase for the THz optoelectronic applications. Our finding should be useful for further developments of the $$\hbox {VO}_2$$ -based devices and technologies.https://doi.org/10.1038/s41598-025-87573-9$$\hbox {VO}_2$$Thin filmsPhase change materialsInsulator-metal transitionBroadband dielectric spectroscopyComplex dielectric permittivity |
| spellingShingle | Arsenii A. Gavdush Vladislav A. Zhelnov Kirill B. Dolganov Alexander A. Bogutskii Sergey V. Garnov Maria G. Burdanova Dmitry S. Ponomarev Qiwu Shi Kirill I. Zaytsev Gennadii A. Komandin Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy Scientific Reports $$\hbox {VO}_2$$ Thin films Phase change materials Insulator-metal transition Broadband dielectric spectroscopy Complex dielectric permittivity |
| title | Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy |
| title_full | Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy |
| title_fullStr | Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy |
| title_full_unstemmed | Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy |
| title_short | Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy |
| title_sort | insulator metal transition in vo2 film on sapphire studied by broadband dielectric spectroscopy |
| topic | $$\hbox {VO}_2$$ Thin films Phase change materials Insulator-metal transition Broadband dielectric spectroscopy Complex dielectric permittivity |
| url | https://doi.org/10.1038/s41598-025-87573-9 |
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