650 nm emitting InGaN red micro-LEDs with ITO n-electrodes
InGaN red micro-LEDs were fabricated with indium tin oxide (ITO) and metal n-electrode designs. Micro-LEDs with ITO electrodes achieved a peak on-wafer external quantum efficiency of 2.1% (at 1.25 A cm ^−2 ) and wall-plug efficiency of 1.7% (at 0.64 A cm ^−2 ), representing 1.6 times and 1.5 times i...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/addbbf |
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