Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor
The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this deg...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2001/53209 |
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| _version_ | 1850219851356831744 |
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| author | N. Toufik F. Pélanchon P. Mialhe |
| author_facet | N. Toufik F. Pélanchon P. Mialhe |
| author_sort | N. Toufik |
| collection | DOAJ |
| description | The effect of an electrical ageing on npn bipolar transistor has been studied. The current
gain decreases substantially and the electrical properties are discussed. The emitter-base
junction parameters are degraded during the electrical stress experiments. Both the
amplitude and the rate of this degradation depend on the stress duration. The
evaluation of these parameters allows to discuss hot carrier degradation process, to
estimate the stress magnitude and to control the device. |
| format | Article |
| id | doaj-art-7648a42945d74bec9a5bed4a32f5da7c |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-7648a42945d74bec9a5bed4a32f5da7c2025-08-20T02:07:16ZengWileyActive and Passive Electronic Components0882-75161563-50312001-01-0124315516310.1155/2001/53209Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar TransistorN. Toufik0F. Pélanchon1P. Mialhe2C.E.F., University of Perpignan, 52 av. de Villeneuve, Perpignan F-66860, FranceC.E.F., University of Perpignan, 52 av. de Villeneuve, Perpignan F-66860, FranceC.E.F., University of Perpignan, 52 av. de Villeneuve, Perpignan F-66860, FranceThe effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this degradation depend on the stress duration. The evaluation of these parameters allows to discuss hot carrier degradation process, to estimate the stress magnitude and to control the device.http://dx.doi.org/10.1155/2001/53209 |
| spellingShingle | N. Toufik F. Pélanchon P. Mialhe Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor Active and Passive Electronic Components |
| title | Degradation of Junction Parameters of an Electrically
Stressed NPN Bipolar Transistor |
| title_full | Degradation of Junction Parameters of an Electrically
Stressed NPN Bipolar Transistor |
| title_fullStr | Degradation of Junction Parameters of an Electrically
Stressed NPN Bipolar Transistor |
| title_full_unstemmed | Degradation of Junction Parameters of an Electrically
Stressed NPN Bipolar Transistor |
| title_short | Degradation of Junction Parameters of an Electrically
Stressed NPN Bipolar Transistor |
| title_sort | degradation of junction parameters of an electrically stressed npn bipolar transistor |
| url | http://dx.doi.org/10.1155/2001/53209 |
| work_keys_str_mv | AT ntoufik degradationofjunctionparametersofanelectricallystressednpnbipolartransistor AT fpelanchon degradationofjunctionparametersofanelectricallystressednpnbipolartransistor AT pmialhe degradationofjunctionparametersofanelectricallystressednpnbipolartransistor |