APA (7th ed.) Citation

Hergt, M., Hammer, B., Sack, M., Mayer, L. W., Nielebock, S., & Hiller, M. Modelling of SiC and GaN transistors based on pulsed S-parameter measurements. Elsevier.

Chicago Style (17th ed.) Citation

Hergt, Martin, Bernhard Hammer, Martin Sack, Lukas W. Mayer, Sebastian Nielebock, and Marc Hiller. Modelling of SiC and GaN Transistors Based on Pulsed S-parameter Measurements. Elsevier.

MLA (9th ed.) Citation

Hergt, Martin, et al. Modelling of SiC and GaN Transistors Based on Pulsed S-parameter Measurements. Elsevier.