THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and...
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| Main Authors: | N.P. VASSEL, S.G. KUREN, S.S. VASSEL, I.V. PAVLOVA |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Don State Technical University
2009-09-01
|
| Series: | Advanced Engineering Research |
| Online Access: | https://www.vestnik-donstu.ru/jour/article/view/1168 |
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