Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures
Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose f...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/835942 |
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| author | Beirong Zheng Chen Zhou Quan Wang Yifeng Chen Wei Xue |
| author_facet | Beirong Zheng Chen Zhou Quan Wang Yifeng Chen Wei Xue |
| author_sort | Beirong Zheng |
| collection | DOAJ |
| description | Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN) is deposited by the low pressure chemical vapor deposition (LPCVD) process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture. |
| format | Article |
| id | doaj-art-7519484ed2f643eaaf2bd198281e7cec |
| institution | OA Journals |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-7519484ed2f643eaaf2bd198281e7cec2025-08-20T02:07:20ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422013-01-01201310.1155/2013/835942835942Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device StructuresBeirong Zheng0Chen Zhou1Quan Wang2Yifeng Chen3Wei Xue4College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 323035, ChinaCollege of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 323035, ChinaState Key Lab of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaCollege of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 323035, ChinaCollege of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 323035, ChinaSurface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN) is deposited by the low pressure chemical vapor deposition (LPCVD) process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture.http://dx.doi.org/10.1155/2013/835942 |
| spellingShingle | Beirong Zheng Chen Zhou Quan Wang Yifeng Chen Wei Xue Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures Advances in Materials Science and Engineering |
| title | Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures |
| title_full | Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures |
| title_fullStr | Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures |
| title_full_unstemmed | Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures |
| title_short | Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures |
| title_sort | deposition of low stress silicon nitride thin film and its application in surface micromachining device structures |
| url | http://dx.doi.org/10.1155/2013/835942 |
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