Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes
To enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN heterostructure layer. The calculated results showe...
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7894223/ |
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| author | Haifan You Zhenguang Shao Yiran Wang Liqun Hu Dunjun Chen Hai Lu Rong Zhang Youdou Zheng |
| author_facet | Haifan You Zhenguang Shao Yiran Wang Liqun Hu Dunjun Chen Hai Lu Rong Zhang Youdou Zheng |
| author_sort | Haifan You |
| collection | DOAJ |
| description | To enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN heterostructure layer. The calculated results showed that the improved APD with the Al<sub>0.3</sub> Ga<sub>0.7</sub>N/Al<sub>0.45</sub>Ga<sub>0.55</sub>N heterogeneous multiplication region exhibits 51% higher gain than that of the conventional APD, benefiting from the six times higher hole ionization coefficient of Al <sub>0.3</sub>Ga<sub>0.7</sub>N, compared to that of Al<sub>0.45</sub>Ga<sub>0.55</sub>N. Furthermore, we inserted an intermediate n-type AlGaN charge layer into the heterogeneous multiplication region to obtain superior performance by finely controlling the electric field distribution. The dependence of breakdown voltage and multiplication gain on the Al content, doping concentration, and thickness of the charge layer is studied in detail to get the optimal structure. Meanwhile, the solar-blind characteristic is also taken into account when optimizing the APD structure. |
| format | Article |
| id | doaj-art-74fb56ef941b48a095f055a209d1ae03 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-74fb56ef941b48a095f055a209d1ae032025-08-20T03:31:20ZengIEEEIEEE Photonics Journal1943-06552017-01-01931710.1109/JPHOT.2017.26915557894223Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche PhotodiodesHaifan You0Zhenguang Shao1Yiran Wang2Liqun Hu3Dunjun Chen4Hai Lu5Rong Zhang6Youdou Zheng7Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaCollege of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaTo enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN heterostructure layer. The calculated results showed that the improved APD with the Al<sub>0.3</sub> Ga<sub>0.7</sub>N/Al<sub>0.45</sub>Ga<sub>0.55</sub>N heterogeneous multiplication region exhibits 51% higher gain than that of the conventional APD, benefiting from the six times higher hole ionization coefficient of Al <sub>0.3</sub>Ga<sub>0.7</sub>N, compared to that of Al<sub>0.45</sub>Ga<sub>0.55</sub>N. Furthermore, we inserted an intermediate n-type AlGaN charge layer into the heterogeneous multiplication region to obtain superior performance by finely controlling the electric field distribution. The dependence of breakdown voltage and multiplication gain on the Al content, doping concentration, and thickness of the charge layer is studied in detail to get the optimal structure. Meanwhile, the solar-blind characteristic is also taken into account when optimizing the APD structure.https://ieeexplore.ieee.org/document/7894223/AlGaNavalanche photodiodes (APDs)heterostructurefine control. |
| spellingShingle | Haifan You Zhenguang Shao Yiran Wang Liqun Hu Dunjun Chen Hai Lu Rong Zhang Youdou Zheng Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes IEEE Photonics Journal AlGaN avalanche photodiodes (APDs) heterostructure fine control. |
| title | Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes |
| title_full | Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes |
| title_fullStr | Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes |
| title_full_unstemmed | Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes |
| title_short | Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes |
| title_sort | fine control of the electric field distribution in the heterostructure multiplication region of algan avalanche photodiodes |
| topic | AlGaN avalanche photodiodes (APDs) heterostructure fine control. |
| url | https://ieeexplore.ieee.org/document/7894223/ |
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