Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Introduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification. Parametric reliability of the designed devices is an importan...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Saint Petersburg Electrotechnical University "LETI"
2025-07-01
|
| Series: | Известия высших учебных заведений России: Радиоэлектроника |
| Subjects: | |
| Online Access: | https://re.eltech.ru/jour/article/view/1021 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|