Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT
This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using <inline-formula> <tex-math notation="LaTeX">$C_{i s s}$ </tex-math></inline-formu...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11078449/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|