Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT
This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using <inline-formula> <tex-math notation="LaTeX">$C_{i s s}$ </tex-math></inline-formu...
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/11078449/ |
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| author | Taeyoung Cho Jesun Park Sungyeop Jung Myounggon Kang |
| author_facet | Taeyoung Cho Jesun Park Sungyeop Jung Myounggon Kang |
| author_sort | Taeyoung Cho |
| collection | DOAJ |
| description | This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using <inline-formula> <tex-math notation="LaTeX">$C_{i s s}$ </tex-math></inline-formula> (input capacitance), <inline-formula> <tex-math notation="LaTeX">$C_{o s s}$ </tex-math></inline-formula> (output capacitance), and <inline-formula> <tex-math notation="LaTeX">$C_{r s s}$ </tex-math></inline-formula> (reverse transfer capacitance). The <inline-formula> <tex-math notation="LaTeX">$C_{o s s}$ </tex-math></inline-formula> was also analyzed. Based on depletion-mode (d-mode) measurement data from the MIT virtual source GaN HEMT (MVSG) compact model, a measurement circuit for <inline-formula> <tex-math notation="LaTeX">$C_{i s s}, C_{o s s}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$C_{r s s}$ </tex-math></inline-formula> was constructed and calibrated for reliability. Subsequently, the circuit, initially configured for d-mode GaN HEMT intrinsic capacitance measurements, was optimized for e-mode GaN HEMT, upon which intrinsic capacitance was measured. The influence on the graph was analyzed by varying parameters in the measured capacitance data, leading to the modeling of intrinsic capacitance. |
| format | Article |
| id | doaj-art-7468d57fe2cc420b9e77cfda9b5df151 |
| institution | DOAJ |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-7468d57fe2cc420b9e77cfda9b5df1512025-08-20T03:16:12ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011363864110.1109/JEDS.2025.358818011078449Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMTTaeyoung Cho0Jesun Park1https://orcid.org/0009-0007-1685-2928Sungyeop Jung2https://orcid.org/0000-0003-2669-1797Myounggon Kang3https://orcid.org/0000-0003-4132-0038Department of Electronics Engineering, Korea National University of Transportation, Chungju, South KoreaDepartment of Intelligent Semiconductor Engineering, University of Seoul, Seoul, Republic of KoreaDepartment of AI Semiconductor Engineering, Korea University, Sejong, Republic of KoreaDepartment of Intelligent Semiconductor Engineering, University of Seoul, Seoul, Republic of KoreaThis paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using <inline-formula> <tex-math notation="LaTeX">$C_{i s s}$ </tex-math></inline-formula> (input capacitance), <inline-formula> <tex-math notation="LaTeX">$C_{o s s}$ </tex-math></inline-formula> (output capacitance), and <inline-formula> <tex-math notation="LaTeX">$C_{r s s}$ </tex-math></inline-formula> (reverse transfer capacitance). The <inline-formula> <tex-math notation="LaTeX">$C_{o s s}$ </tex-math></inline-formula> was also analyzed. Based on depletion-mode (d-mode) measurement data from the MIT virtual source GaN HEMT (MVSG) compact model, a measurement circuit for <inline-formula> <tex-math notation="LaTeX">$C_{i s s}, C_{o s s}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$C_{r s s}$ </tex-math></inline-formula> was constructed and calibrated for reliability. Subsequently, the circuit, initially configured for d-mode GaN HEMT intrinsic capacitance measurements, was optimized for e-mode GaN HEMT, upon which intrinsic capacitance was measured. The influence on the graph was analyzed by varying parameters in the measured capacitance data, leading to the modeling of intrinsic capacitance.https://ieeexplore.ieee.org/document/11078449/GaN HEMTsMIT virtual source GaN HEMT (MVSG)depletion-mode (d-mode)enhancement-mode (e-mode)intrinsic capacitancedepletion region |
| spellingShingle | Taeyoung Cho Jesun Park Sungyeop Jung Myounggon Kang Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT IEEE Journal of the Electron Devices Society GaN HEMTs MIT virtual source GaN HEMT (MVSG) depletion-mode (d-mode) enhancement-mode (e-mode) intrinsic capacitance depletion region |
| title | Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT |
| title_full | Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT |
| title_fullStr | Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT |
| title_full_unstemmed | Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT |
| title_short | Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT |
| title_sort | analysis and modeling of intrinsic capacitance in enhancement mode gan hemt |
| topic | GaN HEMTs MIT virtual source GaN HEMT (MVSG) depletion-mode (d-mode) enhancement-mode (e-mode) intrinsic capacitance depletion region |
| url | https://ieeexplore.ieee.org/document/11078449/ |
| work_keys_str_mv | AT taeyoungcho analysisandmodelingofintrinsiccapacitanceinenhancementmodeganhemt AT jesunpark analysisandmodelingofintrinsiccapacitanceinenhancementmodeganhemt AT sungyeopjung analysisandmodelingofintrinsiccapacitanceinenhancementmodeganhemt AT myounggonkang analysisandmodelingofintrinsiccapacitanceinenhancementmodeganhemt |