Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT

Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT

This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using <inline-formula> <tex-math notation="LaTeX">$C_{i s s}$ </tex-math></inline-formu...

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Bibliographic Details
Main Authors: Taeyoung Cho, Jesun Park, Sungyeop Jung, Myounggon Kang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN HEMTs
MIT virtual source GaN HEMT (MVSG)
depletion-mode (d-mode)
enhancement-mode (e-mode)
intrinsic capacitance
depletion region
Online Access:https://ieeexplore.ieee.org/document/11078449/
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Summary:This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using <inline-formula> <tex-math notation="LaTeX">$C_{i s s}$ </tex-math></inline-formula> (input capacitance), <inline-formula> <tex-math notation="LaTeX">$C_{o s s}$ </tex-math></inline-formula> (output capacitance), and <inline-formula> <tex-math notation="LaTeX">$C_{r s s}$ </tex-math></inline-formula> (reverse transfer capacitance). The <inline-formula> <tex-math notation="LaTeX">$C_{o s s}$ </tex-math></inline-formula> was also analyzed. Based on depletion-mode (d-mode) measurement data from the MIT virtual source GaN HEMT (MVSG) compact model, a measurement circuit for <inline-formula> <tex-math notation="LaTeX">$C_{i s s}, C_{o s s}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$C_{r s s}$ </tex-math></inline-formula> was constructed and calibrated for reliability. Subsequently, the circuit, initially configured for d-mode GaN HEMT intrinsic capacitance measurements, was optimized for e-mode GaN HEMT, upon which intrinsic capacitance was measured. The influence on the graph was analyzed by varying parameters in the measured capacitance data, leading to the modeling of intrinsic capacitance.
ISSN:2168-6734

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