Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing
Abstract While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the challenges in achieving desirable Ge i...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400841 |
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