Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing
Abstract While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the challenges in achieving desirable Ge i...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400841 |
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| author | Sheng‐Yen Zheng Wei‐Ning Kao Yu‐Hsing Chen Yung‐Hsien Wu |
| author_facet | Sheng‐Yen Zheng Wei‐Ning Kao Yu‐Hsing Chen Yung‐Hsien Wu |
| author_sort | Sheng‐Yen Zheng |
| collection | DOAJ |
| description | Abstract While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the challenges in achieving desirable Ge interface quality. In this work, ferroelectric HfZrOx (HZO) is integrated with a high‐k Al2O3/AlN interfacial layer (IL), along with microwave annealing (MWA), to implement Ge n‐FeFET memory devices, and their memory and reliability characteristics, as well as their potential for neuromorphic applications, are extensively explored. A large memory window (MW) of 2.5 V is achieved by applying ±5 V for 5 µs while 3 bits/cell (triple‐level cell) operation is demonstrated. By using a recovery scheme, excellent 1‐bit/cell (single‐level cell) characteristics up to 108 cycles are also obtained. The proposed IL and low thermal budget of MWA alleviate element diffusion and reduce oxygen vacancies, marking the first demonstration of Ge n‐FeFET memory devices controlled by dipoles. Furthermore, short‐term synaptic plasticity, such as excitatory/inhibitory postsynaptic currents (EPSC/IPSC), which are essential for neuromorphic computing is also achieved. These findings suggest that Ge n‐FeFET memory devices could pave the way for high‐density embedded memory applications and could further be integrated with existing Ge p‐FeFET memory devices to form Ge‐based FeCMOS, enabling more versatile circuit functionalities. |
| format | Article |
| id | doaj-art-73e888a9884444d08ddc19c04dc470a5 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
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| series | Advanced Electronic Materials |
| spelling | doaj-art-73e888a9884444d08ddc19c04dc470a52025-08-20T03:21:30ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-06-01119n/an/a10.1002/aelm.202400841Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave AnnealingSheng‐Yen Zheng0Wei‐Ning Kao1Yu‐Hsing Chen2Yung‐Hsien Wu3Department of Engineering and System Science National Tsing Hua University Hsinchu 30013 TaiwanDepartment of Engineering and System Science National Tsing Hua University Hsinchu 30013 TaiwanDepartment of Engineering and System Science National Tsing Hua University Hsinchu 30013 TaiwanDepartment of Engineering and System Science National Tsing Hua University Hsinchu 30013 TaiwanAbstract While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the challenges in achieving desirable Ge interface quality. In this work, ferroelectric HfZrOx (HZO) is integrated with a high‐k Al2O3/AlN interfacial layer (IL), along with microwave annealing (MWA), to implement Ge n‐FeFET memory devices, and their memory and reliability characteristics, as well as their potential for neuromorphic applications, are extensively explored. A large memory window (MW) of 2.5 V is achieved by applying ±5 V for 5 µs while 3 bits/cell (triple‐level cell) operation is demonstrated. By using a recovery scheme, excellent 1‐bit/cell (single‐level cell) characteristics up to 108 cycles are also obtained. The proposed IL and low thermal budget of MWA alleviate element diffusion and reduce oxygen vacancies, marking the first demonstration of Ge n‐FeFET memory devices controlled by dipoles. Furthermore, short‐term synaptic plasticity, such as excitatory/inhibitory postsynaptic currents (EPSC/IPSC), which are essential for neuromorphic computing is also achieved. These findings suggest that Ge n‐FeFET memory devices could pave the way for high‐density embedded memory applications and could further be integrated with existing Ge p‐FeFET memory devices to form Ge‐based FeCMOS, enabling more versatile circuit functionalities.https://doi.org/10.1002/aelm.202400841Al2O3/AlNelectron trappingenduranceexcitatory/inhibitory postsynaptic currents (EPSC/IPSC)ferroelectric FET (FeFET)germanium (Ge) |
| spellingShingle | Sheng‐Yen Zheng Wei‐Ning Kao Yu‐Hsing Chen Yung‐Hsien Wu Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing Advanced Electronic Materials Al2O3/AlN electron trapping endurance excitatory/inhibitory postsynaptic currents (EPSC/IPSC) ferroelectric FET (FeFET) germanium (Ge) |
| title | Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing |
| title_full | Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing |
| title_fullStr | Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing |
| title_full_unstemmed | Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing |
| title_short | Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing |
| title_sort | ge n channel ferroelectric fet memory with al2o3 aln interfacial layer by microwave annealing |
| topic | Al2O3/AlN electron trapping endurance excitatory/inhibitory postsynaptic currents (EPSC/IPSC) ferroelectric FET (FeFET) germanium (Ge) |
| url | https://doi.org/10.1002/aelm.202400841 |
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